Datasheet

© 2011 Microchip Technology Inc. DS25004A-page 3
MCP16301
1.0 ELECTRICAL
CHARACTERISTICS
Absolute Maximum Ratings †
V
IN,
SW ............................................................... -0.5V to 40V
BOOST – GND ................................................... -0.5V to 46V
BOOST – SW Voltage........................................-0.5V to 6.0V
V
FB
Voltage........................................................-0.5V to 6.0V
EN Voltage............................................. -0.5V to (V
IN
+ 0.3V)
Output Short Circuit Current .................................Continuous
Power Dissipation .......................................Internally Limited
Storage Temperature ................................... -65°C to +150°C
Ambient Temperature with Power Applied ..... -40°C to +85°C
Operating Junction Temperature.................. -40°C to +125°C
ESD Protection On All Pins:
HBM.................................................................3 kV
MM.................................................................200 V
† Notice: Stresses above those listed under “Maximum
Ratings” may cause permanent damage to the device.
This is a stress rating only and functional operation of
the device at those or any other conditions above those
indicated in the operational sections of this
specification is not intended. Exposure to maximum
rating conditions for extended periods may affect
device reliability.
DC CHARACTERISTICS
Electrical Characteristics: Unless otherwise indicated, T
A
= +25°C, V
IN
= V
EN
= 12V, V
BOOST
- V
SW
= 3.3V,
V
OUT
= 3.3V, I
OUT
= 100 mA, L = 15 µH, C
OUT
= C
IN
= 2 X 10 µF X7R Ceramic Capacitors
Boldface specifications apply over the T
A
range of -40
o
C to +85
o
C.
Parameters Sym Min Typ Max Units Conditions
Input Voltage V
IN
— 4.0 30 V Note 1
Feedback Voltage V
FB
0.784 0.800 0.816 V
Output Voltage Adjust Range V
OUT
2.0 — 15.0 V Note 2
Feedback Voltage
Line Regulation
(ΔV
FB
/V
FB
)/ΔV
IN
— 0.01 0.1 %/V V
IN
= 12V to 30V;
Feedback Input Bias Current I
FB
-250 ±10 +250 nA
Undervoltage Lockout Start UVLO
STRT
— 3.5 4.0 V V
IN
Rising
Undervoltage Lockout Stop UVLO
STOP
2.4 3.0 — V V
IN
Falling
Undervoltage Lockout
Hysteresis
UVLO
HYS
— 0.4 — V
Switching Frequency f
SW
425 500 550 kHz I
OUT
= 200 mA
Maximum Duty Cycle DC
MAX
90 95 — % V
IN
= 5V; V
FB
= 0.7V;
I
OUT
= 100 mA
Minimum Duty Cycle DC
MIN
— 1 — %
NMOS Switch On Resistance R
DS(ON)
— 0.46 — Ω V
BOOST
- V
SW
= 3.3V
NMOS Switch Current Limit I
N(MAX)
— 1.3 — A V
BOOST
- V
SW
= 3.3V
Quiescent Current I
Q
— 2 7.5 mA V
BOOST
= 3.3V; Note 3
Quiescent Current - Shutdown I
Q
— 7 10 µA V
OUT
= EN = 0V
Maximum Output Current I
OUT
600 — — mA Note 1
EN Input Logic High V
IH
1.4 — — V
EN Input Logic Low V
IL
— — 0.4 V
EN Input Leakage Current I
ENLK
— 0.05 1.0 µA V
EN
= 12V
Soft-Start Time t
SS
— 150 — µS EN Low to High,
90% of V
OUT
Note 1: The input voltage should be > output voltage + headroom voltage; higher load currents increase the input voltage
necessary for regulation. See characterization graphs for typical input to output operating voltage range.
2: For V
IN
< V
OUT
, V
OUT
will not remain in regulation.
3: V
BOOST
supply is derived from V
OUT
.