Datasheet

MCP1406/07
DS20002019C-page 6  2006-2016 Microchip Technology Inc.
TEMPERATURE CHARACTERISTICS
Electrical Specifications: Unless otherwise noted, all parameters apply with 4.5V  V
DD
 18V.
Parameters Sym. Min. Typ. Max. Units Conditions
Temperature Ranges
Specified Temperature Range T
A
-40 — +125 °C
Maximum Junction Temperature T
J
— — +150 °C
Storage Temperature Range T
A
-65 — +150 °C
Package Thermal Resistances
Junction-to-Ambient Thermal Resistance,
8-L 6x5 DFN

JA
—31.8 —°C/WNote 1
Junction-to-Ambient Thermal Resistance, 8-L PDIP 
JA
—65.2 —°C/WNote 1
Junction-to-Ambient Thermal Resistance, 8-L SOIC 
JA
—96.3 —°C/WNote 1
Junction-to-Ambient Thermal Resistance,
5-L TO-220

JA
—20.1 —°C/WNote 1
Junction-to-Case (Bottom) Thermal Resistance,
5-L TO-220

JC(BOT)
3.2 — °C/W Note 2
Junction-to-Top Characterization Parameter,
8-L 6x5 DFN

JT
0.2 — °C/W Note 1
Junction-to-Top Characterization Parameter,
8-L PDIP

JT
8.8 — °C/W Note 1
Junction-to-Top Characterization Parameter,
8-L SOIC

JT
3.2 — °C/W Note 1
Junction-to-Top Characterization Parameter,
5-L TO-220

JT
3.6 — °C/W Note 1
Junction-to-Board Characterization Parameter,
8-L 6x5 DFN

JB
15.5 — °C/W Note 1
Junction-to-Board Characterization Parameter,
8-L PDIP

JB
36.1 — °C/W Note 1
Junction-to-Board Characterization Parameter,
8-L SOIC

JB
60.7 — °C/W Note 1
Junction-to-Board Characterization Parameter,
5-L TO-220

JB
4.0 — °C/W Note 1
Note 1: Parameter is determined using a High 2S2P 4-layer board, as described in JESD 51-7, as well as in JESD
51-5, for packages with exposed pads.
2: Parameter is determined using a 1S0P 2-layer board with a cold plate attached to indicated location.