Datasheet
2
Supertex inc.
www.supertex.com
Doc.# DSFP-LND150
C041114
LND150
Electrical Characteristics (T
A
= 25
O
C unless otherwise specied)
Sym Parameter Min Typ Max Units Conditions
BV
DSX
Drain-to-source breakdown voltage 500 - - V V
GS
= -10V, I
D
= 1.0mA
V
GS(OFF)
Gate-to-source off voltage -1.0 - -3.0 V V
GS
= 25V, I
D
= 100nA
ΔV
GS(OFF)
Change in V
GS(OFF)
with temperature - - 5.0 mV/
O
C V
GS
= 25V, I
D
= 100nA
I
GSS
Gate body leakage current - - 100 nA V
GS
= ± 20V, V
DS
= 0V
I
D(OFF)
Drain-to-source leakage current
- - 100 nA V
GS
= -10V, V
DS
= 450V
- - 100 µA
V
DS
= 0.8V Max Rating,
V
GS
= -10V, T
A
= 125
O
C
I
DSS
Saturated drain-to-source current 1.0 - 3.0 mA V
GS
= 0V, V
DS
= 25V
R
DS(ON)
Static drain-to-source on-state resistance - 850 1000 Ω V
GS
= 0V, I
D
= 0.5mA
ΔR
DS(ON)
Change in R
DS(ON)
with temperature - - 1.2 %/
O
C V
GS
= 0V, I
D
= 0.5mA
G
FS
Forward transductance 1.0 2.0 - m V
DS
= 0V, I
D
= 1.0mA
C
ISS
Input capacitance - 7.5 10
pF
V
GS
= -10V,
V
DS
= 25V,
f = 1.0MHz
C
OSS
Common source output capacitance - 2.0 3.5
C
RSS
Reverse transfer capacitance - 0.5 1.0
t
d(ON)
Turn-on delay time - 0.09 -
µs
V
DD
= 25V,
I
D
= 1.0mA,
R
GEN
= 25Ω
t
r
Rise time - 0.45 -
t
d(OFF)
Turn-off delay time - 0.1 -
t
f
Fall time - 1.3 -
V
SD
Diode forward voltage drop - - 0.9 V V
GS
= -10V, I
SD
= 1.0mA
t
rr
Reverse recovery time - 200 - ns V
GS
= -10V, I
SD
= 1.0mA
Notes:
1. All D.C. parameters 100% tested at 25
O
C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
2. All A.C. parameters sample tested.
Notes:
† I
D
(continuous) is limited by max rated T
j
.
Thermal Characteristics
Package
I
D
(continuous)
†
(mA)
I
D
(pulsed)
(mA)
Power Dissipation
@T
A
= 25
O
C
(W)
θ
ja
(
O
C/W)
I
DR
(mA)
I
DRM
†
(mA)
TO-236AB (SOT-23) 13 30 0.36 203 13 30
TO-92 30 30 0.74 132 30 30
TO-243AA (SOT-89) 30 30 1.6
‡
133 30 30
Switching Waveforms and Test Circuit
90%
10%
90%
90%
10%
10%
Pulse
Generator
VDD
R
L
OUTPUT
D.U.T.
t
(ON)
t
d(ON)
t
(OFF)
t
d(OFF)
t
r
INPUT
INPUT
OUTPUT
0V
VDD
R
GEN
0V
-10V
t
f
Ω