Datasheet

ManualsBrandsMicrochip ManualsDiscrete SemiconductorsMOSFET, TO-92, 500 V, 1 A, 0.74 W

Supertex inc.

www.supertex.com

Doc.# DSFP-LND150

C041114

LND150

General Description

The LND150 is a high voltage N-channel depletion mode

(normally-on) transistor utilizing Supertex’s lateral DMOS

technology. The gate is ESD protected.

The LND150 is ideal for high voltage applications in the

areas of normally-on switches, precision constant current

sources, voltage ramp generation and amplication.

N-Channel Depletion-Mode

DMOS FET

Absolute Maximum Ratings

Parameter Value

Drain-to-source BV

DSX

Drain-to-gate BV

DGX

Gate-to-source ±20V

Operating and storage temperature -55

C to +150

Absolute Maximum Ratings are those values beyond which damage to the device may

occur. Functional operation under these conditions is not implied. Continuous operation

of the device at the absolute rating level may affect device reliability. All voltages are

referenced to device ground.

TO-92

Product Marking

TO-243AA (SOT-89)

LN1EW

W = Code for Week Sealed

= “Green” Packaging

Features

► Free from secondary breakdown

► Low power drive requirement

► Ease of paralleling

► Excellent thermal stability

► Integral source-drain diode

► High input impedance and low C

ISS

► ESD gate protection

Applications

► Solid state relays

► Normally-on switches

► Converters

► Power supply circuits

► Constant current sources

► Input protection circuits

GATE

SOURCE

DRAIN

TO-243AA (SOT-89)

GATE

SOURCE

DRAIN

SOURCE

YY = Year Sealed

WW = Week Sealed

= “Green” Packaging

SiLN

D150

YYWW

TO-92

Packages may or may not include the following marks: Si or

Pin Conguration

TO-236AB (SOT-23)

DRAIN

SOURCE

GATE

NDEW

W = Code for Week Sealed

= “Green” Packaging

Product Summary

DSX

/BV

DGX

(V)

DS(ON)

(max)

DSS

(min)

500 1.0kΩ 1.0mA

Ordering Information

Part Number Package Options Packing

LND150K1-G TO-236AB (SOT-23) 3000/Reel

LND150N3-G TO-92 1000/Bag

LND150N3-G P002 TO-92 2000/Reel

LND150N3-G P003 TO-92 2000/Reel

LND150N3-G P005 TO-92 2000/Reel

LND150N3-G P013 TO-92 2000/Reel

LND150N3-G P014 TO-92 2000/Reel

LND150N8-G TO-243AA (SOT-89) 2000/Reel

-G denotes a lead (Pb)-free / RoHS compliant package

Summary of content (7 pages)

PAGE 1
Supertex inc. LND150 N-Channel Depletion-Mode DMOS FET Features ► ► ► ► ► ► ► General Description Free from secondary breakdown Low power drive requirement Ease of paralleling Excellent thermal stability Integral source-drain diode High input impedance and low CISS ESD gate protection The LND150 is a high voltage N-channel depletion mode (normally-on) transistor utilizing Supertex’s lateral DMOS technology. The gate is ESD protected.
PAGE 2
LND150 Thermal Characteristics ID ID Power Dissipation (continuous)† (mA) (pulsed) (mA) @TA = 25OC (W) (OC/W) (mA) IDR IDRM† TO-236AB (SOT-23) 13 30 0.36 203 13 30 TO-92 30 30 0.74 132 30 30 TO-243AA (SOT-89) 30 30 1.6 133 30 30 Package θja ‡ (mA) Notes: † ID (continuous) is limited by max rated Tj.
PAGE 3
LND150 Typical Performance Curves Output Characteristics 6 Saturation Characteristics 6 VGS = 1.0V 5 5 4 4 ID (milliamps) ID (milliamps) VGS = 1.0V 0.5V 3 2 0.5V 3 2 0V 1 0V 1 -0.5V 0 0 -0.5V -1.0V 250 0 500 0 1 2 VDS (V) 10 Transconductance vs. Drain Current Power Dissipation vs. Ambient Temperature 2 PD (Watts) GFS (millisiemens) TA = -55°C 6 25°C 4 125°C 1 TO-92 TO-236AB 2 0 2 4 6 8 0 10 0 50 ID (milliamps) Maximum Rated Safe Operating Area 1.
PAGE 4
LND150 Typical Performance Curves (cont.) BVDSS Variation with Temperature ID vs RSOURCE 1.4 VGS = -5.0V 1.1 1.2 25°C 125°C ID (milliamps) 0.6 0.4 0.2 0.9 -50 10 0 50 100 0.0 150 10 100 1K 10K 100K Tj (OC) RSOURCE (Ω) Transfer Characteristics VGS(OFF) and RDS Variation with Temperature 1.8 VDS = 400V 2.0 1.6 VGS(OFF) (normalized) TA = -55°C ID (milliamps) RSOURCE 0.8 25°C 125°C 5 RDS(ON) @ ID = 1.0mA 1.6 1.4 1.2 1.2 0.8 VGS(OFF) @ 100nA 1.
PAGE 5
LND150 3-Lead TO-236AB (SOT-23) Package Outline (K1) 2.90x1.30mm body, 1.12mm height (max), 1.90mm pitch D 3 E1 E Gauge Plane 0.25 1 e b e1 Seating Plane L L1 2 View B Top View View B A A A2 Seating Plane A1 Side View Symbol Dimension (mm) View A - A A A A1 A2 b D E E1 MIN 0.89 0.01 0.88 0.30 2.80 2.10 1.20 NOM - - 0.95 - 2.90 - 1.30 MAX 1.12 0.10 1.02 0.50 3.04 2.64 1.40 e e1 L L1 0.20 † 0.95 BSC 1.90 BSC 0.50 0.60 0.
PAGE 6
LND150 3-Lead TO-92 Package Outline (N3) D A Seating Plane 1 2 3 L c b e1 e Side View Front View E1 E 1 3 2 Bottom View Symbol Dimensions (inches) A b c D E E1 e e1 L MIN .170 .014† .014† .175 .125 .080 .095 .045 .500 NOM - - - - - - - - - MAX .210 .022† .022† .205 .165 .105 .105 .055 .610* JEDEC Registration TO-92. * This dimension is not specified in the JEDEC drawing. † This dimension differs from the JEDEC drawing. Drawings not to scale.
PAGE 7
LND150 3-Lead TO-243AA (SOT-89) Package Outline (N8) D D1 C E H L 1 2 E1 3 b b1 e A e1 Vqr"Xkgy Symbol Dimensions (mm) Ukfg"Xkgy A b b1 C D D1 E E1 e MIN 1.40 0.44 0.36 0.35 4.40 1.62 2.29 2.00† NOM - - - - - - - - MAX 1.60 0.56 0.48 0.44 4.60 1.83 2.60 2.29 1.50 BSC e1 3.00 BSC H L 3.94 0.73† - - 4.25 1.20 JEDEC Registration TO-243, Variation AA, Issue C, July 1986. † This dimension differs from the JEDEC drawing Drawings not to scale.