Datasheet

 2016 Microchip Technology Inc. DS00002246A-page 89
KSZ8895MQX/RQX/FQX/MLX
Energy-Detect Mode + PLL
OFF 1.2V
I
EDM2
—1.5—mA V
DDAR
+ V
DDC
CMOS Inputs
Input High Voltage
(V
DDIO
= 3.3/2.5/1.8V)
V
IH
2.0/1.8/
1.3
—— V —
Input Low Voltage
(V
DDIO
= 3.3/2.5/1.8V)
V
IL
——
0.8/0.7/
0.5
V—
Input Current
(Excluding Pull-Up/
Pull-Down)
I
IN
–10 — 10 µA V
IN
= GND ~ V
DDIO
CMOS Outputs
Input High Voltage
(V
DDIO
= 3.3/2.5/1.8V)
V
OH
2.4/2.0/
1.5
—— V I
OH
= –8 mA
Input Low Voltage
(V
DDIO
= 3.3/2.5/1.8V)
V
OL
——
0.4/0.4/
0.3
VI
OL
= 8 mA
Output Tri-State Leakage I
OZ
— — 10 µA V
IN
= GND ~ V
DDIO
100BASE-TX/FX Transmit (measured differentially after 1:1 transformer)
Peak Differential Output
Voltage
V
O
0.95 — 1.05 V
100 termination on the differential
output
Output Voltage Imbalance V
IMB
—— 2 %
100 termination on the differential
output
Rise/Fall Time
t
r
/t
f
3—5ns —
Rise/Fall Time Imbalance 0 — 0.5 ns —
Duty Cycle Distortion — — — ±0.5 ns —
Overshoot — — — 5 % —
Output Jitters — 0 0.75 1.4 ns Peak-to-Peak
100BASE-FX Receiver
Input Signal
Threshold Voltage
V
IST
400 — — mV 100 impedance on RX±
FXSD Signal-Detect
Voltage Threshold
V
FXSD
—1.2— V
1.2V: FX signal detect mode
<1.2V: Non-signal detect mode
10BASE-T Receive
Squelch Threshold V
SQ
300 400 585 mV 5 MHz square wave
10BASE-T Transmit (measured differentially after 1:1 transformer) V
DDAT
= 3.3V
Peak Differential Output
Voltage
V
P
2.2 2.5 2.8 V
100 termination on the differential
output
Output Jitters — — 1.4 3.5 ns Peak-to-Peak
Rise/Fall Times — — 28 30 ns —
TABLE 6-1: ELECTRICAL CHARACTERISTICS (CONTINUED)
Parameters Symbol Min. Typ. Max. Units Note