Datasheet

 2016-2017 Microchip Technology Inc. DS00002112B-page 115
KSZ8795CLX
Output Low Voltage V
OL
——0.4
V
V
DDIO
= 3.3V
——0.4 V
DDIO
= 2.5V
——0.3 V
DDIO
= 1.8V
Output Tri-State Leakage I
OZ
— — 10 µA V
IN
= GND ~ V
DDIO
100BASE-TX Transmit (measured differentially after 1:1 transformer)
Peak Differential Output
Voltage
V
O
0.95 — 1.05 V
100 termination on the differential
output
Output Voltage Imbalance V
IMB
—— 2 %
100 termination on the differential
output
Rise/Fall Time
t
r
/t
f
3—5
ns
—
Rise/Fall Time Imbalance 0 — 0.5 —
Duty Cycle Distortion — — — ±0.5 ns —
Overshoot — — — 5 % —
Output Jitters — 0 0.75 1.4 ns Peak-to-Peak
10BASE-T Receive
Squelch Threshold V
SQ
300 400 585 mV 5 MHz square wave
10BASE-T Transmit (measured differentially after 1:1 transformer) V
DDAT
= 3.3V
Peak Differential Output
Voltage
V
P
2.2 2.5 2.8 V
100 termination on the differential
output
Output Jitters — — 1.4 3.5 ns Peak-to-Peak
Rise/Fall Times — — 28 30 ns —
I/O Pin Internal Pull-Up and Pull-Down Resistance
I/O Pin Effective Pull-Up
Resistance
R
1.8PU
75 95 135
k
V
DDIO
= 1.8V
I/O Pin Effective Pull-Down
Resistance
R
1.8PD
53 68 120 V
DDIO
= 1.8V
I/O Pin Effective Pull-Up
Resistance
R
2.5PU
46 60 93 V
DDIO
= 2.5V
I/O Pin Effective Pull-Down
Resistance
R
2.5PD
46 59 103 V
DDIO
= 2.5V
I/O Pin Effective Pull-Up
Resistance
R
3.3PU
35 45 65 V
DDIO
= 3.3V
I/O Pin Effective Pull-Down
Resistance
R
3.3PD
37 46 74 V
DDIO
= 3.3V
TABLE 6-1: ELECTRICAL CHARACTERISTICS (CONTINUED)
Parameters Symbol Min. Typ. Max. Units Note