Datasheet

KSZ8795CLX
DS00002112B-page 114  2016-2017 Microchip Technology Inc.
6.0 ELECTRICAL CHARACTERISTICS
V
IN
= 1.2V/3.3V (typical); T
A
= +25°C. Specification is for packaged product only. There is no additional transformer con-
sumption due to use on chip termination technology with internal biasing for 10BASE-T and 100BASE-TX. The test con-
dition is in Port 5 RGMII mode (default). Measurements were taken with operating ratings.
TABLE 6-1: ELECTRICAL CHARACTERISTICS
Parameters Symbol Min. Typ. Max. Units Note
100BASE-TX Operation - All Ports 100% Utilization
100BASE-TX (Transmitter)
3.3V Analog
I
DX
—142—
mA
V
DDAT
100BASE-TX 1.2V I
D12
—35— V
DD12A
+ V
DD12D
100BASE-TX (Digital IO)
3.3V Digital
I
DDIO
—15— V
DDIO
10BASE-T Operation - All Ports 100% Utilization
10BASE-T (Transmitter)
3.3V Analog
I
DX
—135—
mA
V
DDAT
10BASE-T 1.2V I
D12
—30— V
DD12A
+ V
DD12D
10BASE-T (Digital IO) 3.3V
Digital
I
DDIO
—14— V
DDIO
Auto-Negotiation Mode
3.3V Analog I
DX
—66—
mA
V
DDAT
1.2V Analog/Digital I
D12
—35— V
DD12A
+ V
DD12D
3.3V Digital I/O I
DDIO
—14— V
DDIO
Power Management Mode
Soft Power-Down Mode
3.3V
I
SPDM1
—0.07—
mA
V
DDAT
+ V
DDIO
Soft Power-Down Mode
1.2V
I
SPDM2
—0.2— V
DD12A
+ V
DD12D
Energy Detect Mode
(EDPD) 3.3V
I
EDM1
—21— V
DDAT
+ V
DDIO
Energy Detect Mode
(EDPD) 1.2V
I
EDM2
—26.5— V
DD12A
+ V
DD12D
100BT EEE Mode at Idle
3.3V
I
EEE1
—22.5— V
DDAT
+ V
DDIO
100BT EEE Mode at Idle
1.2V
I
EEE2
—27— V
DD12A
+ V
DD12D
CMOS Input
Input High Voltage V
IH
2.0 — —
V
V
DDIO
= 3.3V
1.8 — — V
DDIO
= 2.5V
1.3 — — V
DDIO
= 1.8V
Input Low Voltage V
IL
——0.8
V
V
DDIO
= 3.3V
——0.7 V
DDIO
= 2.5V
——0.5 V
DDIO
= 1.8V
Input Current (Excluding
Pull-Up/Pull-Down)
I
IN
— — 10 µA V
IN
= GND ~ V
DDIO
CMOS Outputs
Output High Voltage V
OH
2.4 — —
V
V
DDIO
= 3.3V
2.0 — — V
DDIO
= 2.5V
1.5 — — V
DDIO
= 1.8V