Datasheet

KSZ8721BL/SL
DS00002813A-page 26  2018 Microchip Technology Inc.
6.0 ELECTRICAL CHARACTERISTICS
TABLE 6-1: ELECTRICAL CHARACTERISTICS (Note 6-1)
V
DD
= 3.3V ±10%
Parameters Symbol Min. Typ. Max. Units Conditions
Total Supply Current (Including TX Output Driver Current) (Note 6-2)
Normal 100BASE-TX I
DD1
— 116 — mA Including 43 mA output current
Normal 100BASE-TX
(Independent of utilization)
I
DD2
—151—mA
Including 103 mA output
current
Power Saving Mode 1 I
DD3
— 47 — mA Auto-negotiation is enable
Power Down Mode I
DD5
—4—mA—
TTL Inputs
Input High Voltage V
IH
1/2V
DD
(I/O)
+0.2
——V—
Input Low Voltage V
IL
——0.8V—
Input Current I
IN
–10 — 10 µA V
IN
= GND ~ V
DDIO
TTL Outputs
Output High Voltage V
OH
1/2V
DD
(I/O)
+0.6
——VI
OH
= –4mA
Output Low Voltage V
OL
——0.4VI
OL
= 4mA
Output Tri-state Leakage I
OZ
— — 10 µA —
100Base-TX Receive
RX+/RX– Differential Input
Resistance
R
IN
—8—kΩ—
Propagation Delay — 50 110 ns From magnetics to RDTX
10Base-TX Transmit (Measured Differentially After 1:1 Transformer)
Peak Differential Output
Voltage
V
O
0.95 — 1.05 V 50Ω from each output to V
DD
Output Voltage Imbalance V
IMB
— — 2 % 50Ω from each output to V
DD
Rise/Fall Time
t
r
, t
f
3—5ns—
Rise/Fall Time Imbalance 0 — 0.5 ns —
Duty Cycle Distortion — — ±0.5 ns —
Overshoot — — 5 % —
Reference Voltage of ISET
V
SET
—0.75—V—
Propagation Delay — 45 60 ns From TDTX to magentics
Jitters — 0.7 1.4 ns
(PP)
—
10Base-TX Receive
RX+/RX– Differential Input
Resistance
R
IN
—8—kW—
Squelch Threshold V
SQ
— 400 — mV 5 MHz square wave
100Base-TX Transmit (Measured Differentially After 1:1 Transformer)
Peak Differential Output
Voltage
V
P
2.2 — 2.8 V 50Ω from each output to V
DD
Jitters Added — — ±3.5 ns 50Ω from each output to V
DD
Rise/Fall Time t
r
, t
f
—25—ns—
Clock Outputs
Crystal Oscillator X1, X2 — 25 — MHz —
Receive Clock, 100TX RXC
100
—25—MHz—