Datasheet

dsPIC33EPXXXGM3XX/6XX/7XX
DS70000689D-page 502  2013-2014 Microchip Technology Inc.
TABLE 34-8: DC CHARACTERISTICS: I/O PIN OUTPUT SPECIFICATIONS
DC CHARACTERISTICS
Standard Operating Conditions: 3.0V to 3.6V
(unless otherwise stated)
Operating temperature -40°C  TA  +150°C
Param. Symbol Characteristic Min. Typ. Max. Units Conditions
HDO10 V
OL Output Low Voltage
4x Sink Driver Pins
(2)
——0.4VIOL  5mA, VDD = 3.3V
(Note 1)
Output Low Voltage
8x Sink Driver Pins
(3)
——0.4VIOL  8 mA, VDD = 3.3V
(Note 1)
HDO20 V
OH Output High Voltage
4x Source Driver Pins
(2)
2.4 — — V IOH  -10 mA, VDD = 3.3V
(Note 1)
Output High Voltage
8x Source Driver Pins
(3)
2.4 — — V IOH  15 mA, VDD = 3.3V
(Note 1)
HDO20A V
OH1 Output High Voltage
4x Source Driver Pins
(2)
1.5 — — V IOH  -3.9 mA, VDD = 3.3V
(Note 1)
2.0 — — I
OH  -3.7 mA, VDD = 3.3V
(Note 1)
3.0 — — I
OH  -2 mA, VDD = 3.3V
(Note 1)
Output High Voltage
8x Source Driver Pins
(3)
1.5 — — V IOH  -7.5 mA, VDD = 3.3V
(Note 1)
2.0 — — I
OH  -6.8 mA, VDD = 3.3V
(Note 1)
3.0 — — I
OH  -3 mA, VDD = 3.3V
(Note 1)
Note 1: Parameters are characterized, but not tested.
2: Includes all I/O pins that are not 8x Sink Driver pins (see below).
3: Includes the following pins:
For 44-pin devices: RA3, RA4, RA7, RA9, RA10, RB7, RB<15:9>, RC1 and RC<9:3>
For 64-pin devices: RA4, RA7, RA<10:9>, RB7, RB<15:9>, RC1, RC<9:3>, RC15 and RG<8:7>
For 100-pin devices: RA4, RA7, RA9, RA10, RB7, RB<15:9>, RC1, RC<9:3>, RC15, RD<3:1> and
RG<8:6>
TABLE 34-9: DC CHARACTERISTICS: PROGRAM MEMORY
DC CHARACTERISTICS
Standard Operating Conditions: 3.0V to 3.6V
(unless otherwise stated)
Operating temperature -40°C  TA  +150°C
Param. Symbol Characteristic
(1)
Min. Typ. Max. Units Conditions
Program Flash Memory
HD130 E
P Cell Endurance 10,000 — — E/W -40°C to +150°C
(2)
HD134
T
RETD Characteristic Retention 20 —
—
Year 1000 E/W cycles or less and no
other specifications are violated
Note 1: These parameters are assured by design, but are not characterized or tested in manufacturing.
2: Programming of the Flash memory is allowed up to +150°C.