Datasheet

dsPIC33EPXXXGM3XX/6XX/7XX
DS70000689D-page 444  2013-2014 Microchip Technology Inc.
TABLE 33-13: DC CHARACTERISTICS: PROGRAM MEMORY
DC CHARACTERISTICS
Standard Operating Conditions: V
BOR (min)V to 3.6V
(unless otherwise stated)
Operating temperature -40°C  T
A  +85°C for Industrial
-40°C  T
A  +125°C for Extended
Param
No.
Symbol Characteristic Min Typ
(1)
Max Units Conditions
Program Flash Memory
D130 E
P Cell Endurance 10,000 — — E/W -40C to +125C
D131 V
PR VDD for Read VBORMIN —3.6V
D132b V
PEW VDD for Self-Timed Write 3.0 — 3.6 V
D134 TRETD Characteristic Retention 20 — — Year Provided no other specifications
are violated, -40C to +125C
D135 I
DDP Supply Current During
Programming
—10—mA
D138a T
WW Word Write Cycle Time 46.5 46.9 47.4 µs TWW = 346 FRC cycles,
T
A = +85°C (Note 2)
D138b TWW Word Write Cycle Time 46.0 — 47.9 µs TWW = 346 FRC cycles,
T
A = +125°C (Note 2)
D136a T
PE Row Write Time 0.667 0.673 0.680 ms TRW = 4965 FRC cycles,
T
A = +85°C (Note 2)
D136b TPE Row Write Time 0.660 — 0.687 ms TRW = 4965 FRC cycles,
T
A = +125°C (Note 2)
D137a TPE Page Erase Time 19.6 20 20.1 ms TPE = 146893 FRC cycles,
T
A = +85°C (Note 2)
D137b T
PE Page Erase Time 19.5 — 20.3 ms TPE = 146893 FRC cycles,
T
A = +125°C (Note 2)
Note 1: Data in “Typ” column is at 3.3V, +25°C unless otherwise stated.
2: Other conditions: FRC = 7.3728 MHz, TUN<5:0> = b'011111 (for Min), TUN<5:0> = b'100000 (for Max).
This parameter depends on the FRC accuracy (see Table 33-19) and the value of the FRC Oscillator
Tuning register.