Datasheet

2
Supertex inc.
www.supertex.com
Doc.# DSFP-DN2530
A062713
DN2530
90%
10%
90%
90%
10%
10%
Pulse
Generator
VDD
R
L
OUTPUT
D.U.T.
t
(ON)
t
d(ON)
t
(OFF)
t
d(OFF)
t
r
INPUT
INPUT
OUTPUT
0V
VDD
R
GEN
0V
-10V
t
f
Electrical Characteristics (T
A
= 25
O
C unless otherwise specied)
Sym Parameter Min Typ Max Units Conditions
BV
DSX
Drain-to-source breakdown voltage 300 - - V V
GS
= -5.0V, I
D
= 100µA
V
GS(OFF)
Gate-to-source off voltage -1.0 - -3.5 V V
DS
= 25V, I
D
= 10µA
ΔV
GS(OFF)
Change in V
GS(OFF)
with temperature - - -4.5 mV/
O
C V
DS
= 25V, I
D
= 10µA
I
GSS
Gate body leakage current - - 100 nA V
GS
= ±20V, V
DS
= 0V
I
D(OFF)
Drain-to-source leakage current
- - 10 µA V
DS
= Max rating, V
GS
= -10V
- - 1.0 mA
V
DS
= 0.8 Max Rating,
V
GS
= -10V, T
A
= 125
O
C
I
DSS
Saturated drain-to-source current 200 - - mA V
GS
= 0V, V
DS
= 25V
R
DS(ON)
Static drain-to-source on-state
resistance
- - 12 Ω V
GS
= 0V, I
D
= 150mA
ΔR
DS(ON)
Change in R
DS(ON)
with temperature - - 1.1 %/
O
C V
GS
= 0V, I
D
= 150mA
G
FS
Forward transconductance 300 - - mmho V
DS
= 10V, I
D
= 150mA
C
ISS
Input capacitance - - 300
pF
V
GS
= -10V,
V
DS
= 25V,
f = 1MHz
C
OSS
Common source output capacitance - - 30
C
RSS
Reverse transfer capacitance - - 5
t
d(ON)
Turn-on delay time - - 10
ns
V
DD
= 25V,
I
D
= 150mA,
R
GEN
= 25Ω,
t
r
Rise time - - 15
t
d(OFF)
Turn-off delay time - - 15
t
f
Fall time - - 20
V
SD
Diode forward voltage drop - - 1.8 V V
GS
= -10V, I
SD
= 150mA
t
rr
Reverse recovery time - 600 - ns V
GS
= -10V, I
SD
= 1.0A
Notes:
1. All D.C. parameters 100% tested at 25
O
C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
2. All A.C. parameters sample tested.
Thermal Characteristics
Package
I
D
(continuous)
†
I
D
(pulsed)
Power Dissipation
@T
A
= 25
O
C
I
DR
†
I
DRM
TO-243AA 200mA 500mA 1.6W
‡
200mA 500mA
TO-92 175mA 500mA 0.74W 175mA 500mA
Notes:
† I
D
(continuous) is limited by max rated T
j
.
‡ Mounted on FR4 board, 25mm x 25mm x 1.57mm.
Switching Waveforms and Test Circuit