Datasheet

Table Of Contents
105
XMEGA A4U [DATASHEET]
Atmel-8387H-AVR-ATxmega16A4U-34A4U-64A4U-128A4U-Datasheet_09/2014
36.2.13 Flash and EEPROM Memory Characteristics
Table 36-52. Endurance and data retention.
Table 36-53. Programming time.
Notes: 1. Programming is timed from the 2MHz internal oscillator.
2. EEPROM is not erased if the EESAVE fuse is programmed.
Symbol Parameter Condition Min. Typ. Max. Units
Flash
Write/Erase cycles
25°C 10K
Cycle85°C 10K
105°C 2K
Data retention
25°C 100
Year85°C 25
105°C 10
EEPROM
Write/Erase cycles
25°C 100K
Cycle85°C 100K
105°C 30K
Data retention
25°C 100
Year85°C 25
105°C 10
Symbol Parameter Condition Min. Typ.
(1)
Max. Units
Chip Erase 32KB Flash, EEPROM
(2)
and SRAM erase 50 ms
Application Erase Section erase 6 ms
Flash
Page erase 4
msPage write 4
Atomic page erase and write 8
EEPROM
Page erase 4
msPage write 4
Atomic page erase and write 8