Datasheet
197
8246B–AVR–09/11
ATtiny2313A/4313
Note: a = address high bits, b = address low bits, H = 0 - Low byte, 1 - High Byte, o = data out, i = data in, x = don’t care
If the LSB of RDY/BSY data byte out is ‘1’, a programming operation is still pending. Wait until
this bit returns ‘0’ before the next instruction is carried out.
Within the same page, the low data byte must be loaded prior to the high data byte.
After data is loaded to the page buffer, program the EEPROM page.
21.4 Programming Time for Flash and EEPROM
Flash and EEPROM wait times are listed in Table 21-9.
Write EEPROM Memory
Page (page access)
1100 0010 00xx xxxx xbbb bb00 xxxx xxxx Write EEPROM page at address b.
Read Lock bits 0101 1000 0000 0000 xxxx xxxx xxoo oooo
Read Lock bits. “0” = programmed, “1”
= unprogrammed. See Table 20-1 on
page 178 for details.
Write Lock bits 1010 1100 111x xxxx xxxx xxxx 11ii iiii
Write Lock bits. Set bits = “0” to
program Lock bits. See Table 20-1 on
page 178 for details.
Read Signature Byte 0011 0000 000x xxxx xxxx xxbb oooo oooo Read Signature Byte o at address b.
Write Fuse bits 1010 1100 1010 0000 xxxx xxxx iiii iiii
Set bits = “0” to program, “1” to
unprogram.
Write Fuse High bits 1010 1100 1010 1000 xxxx xxxx iiii iiii
Set bits = “0” to program, “1” to
unprogram.
Write Extended Fuse Bits 1010 1100 1010 0100 xxxx xxxx xxxx xxxi
Set bits = “0” to program, “1” to
unprogram.
Read Fuse bits 0101 0000 0000 0000 xxxx xxxx oooo oooo
Read Fuse bits. “0” = programmed, “1”
= unprogrammed.
Read Fuse High bits 0101 1000 0000 1000 xxxx xxxx oooo oooo
Read Fuse High bits. “0” = pro-
grammed, “1” = unprogrammed.
Read Extended Fuse Bits 0101 0000 0000 1000 xxxx xxxx oooo oooo
Read Extended Fuse bits. “0” = pro-
grammed, “1” = unprogrammed.
Read Calibration Byte 0011 1000 000x xxxx 0000 000b oooo oooo Read Calibration Byte at address b.
Poll RDY/BSY
1111 0000 0000 0000 xxxx xxxx xxxx xxxo
If o = “1”, a programming operation is
still busy. Wait until this bit returns to
“0” before applying another command.
Table 21-8. Serial Programming Instruction Set
Instruction
Instruction Format
OperationByte 1 Byte 2 Byte 3 Byte4
Table 21-9. Minimum Wait Delay Before Writing the Next Flash or EEPROM Location
Symbol Minimum Wait Delay
t
WD_FLASH
4.5 ms
t
WD_EEPROM
4.0 ms
t
WD_ERASE
9.0 ms
t
WD_FUSE
4.5 ms