Datasheet

189
8246B–AVR–09/11
ATtiny2313A/4313
Figure 21-2. Addressing the Flash Which is Organized in Pages
Flash programming waveforms are illustrated in Figure 21-3, where XX means “don’t care” and
letters refer to the programming steps described earlier.
Figure 21-3. Programming the Flash Waveforms
21.2.5 Programming the EEPROM
The EEPROM is organized in pages, see Table 21-2 on page 184. When programming the
EEPROM, the program data is latched into a page buffer. This allows one page of data to be
programmed simultaneously. The programming algorithm for the EEPROM data memory is as
follows (see “Programming the Flash” on page 187 for details on loading command, address and
data):
• A: Load Command “0001 0001”.
• G: Load Address High Byte (0x00 - 0xFF).
• B: Load Address Low Byte (0x00 - 0xFF).
PROGRAM MEMORY
WORD ADDRESS
WITHIN A PAGE
PAGE ADDRESS
WITHIN THE FLASH
INSTRUCTION WORD
PAGE
PCWORD[PAGEMSB:0]:
00
01
02
PAGEEND
PAGE
PCWORDPCPAGE
PCMSB
PAGEMSB
PROGRAM
COUNTER
RDY/BSY
WR
OE
RESET +12V
PAGEL
BS2
0x10 ADDR. LOW
ADDR. HIGH
DATA
DATA LOW DATA HIGH
ADDR. LOW DATA LOW DATA HIGH
XA1
XA0
BS1
XTAL1
XX XX
XX
ABCDEBCDEGH
F