Datasheet
...........continued
DATA[15:0] Symbol Command Executed
0x0012 WP Write Page Flash
0x0022 WPL Write Page and Lock Flash
0x0032 EWP Erase Page and Write Page
0x0042 EWPL Erase Page and Write Page then Lock
0x0013 EA Erase All
0x0014 SLB Set Lock Bit
0x0024 CLB Clear Lock Bit
0x0015 GLB Get Lock Bit
0x0034 SGPB Set General Purpose NVM bit
0x0044 CGPB Clear General Purpose NVM bit
0x0025 GGPB Get General Purpose NVM bit
0x0054 SSE Set Security Bit
0x0035 GSE Get Security Bit
0x001F WRAM Write Memory
0x001E GVE Get Version
18.3.3 Entering Parallel Programming Mode
The following algorithm puts the device in Parallel Programming mode:
1.
Apply the supplies as described in table Signal Description List.
2. If an external clock is available, apply it to XIN within the VDDCORE POR reset time-out period, as defined in
the section “Electrical Characteristics”.
3. Wait for the end of this reset period.
4. Start a read or write handshaking.
18.3.4 Programmer Handshaking
A handshake is defined for read and write operations. When the device is ready to start a new operation (RDY signal
set), the programmer starts the handshake by clearing the NCMD signal. The handshaking is completed once the
NCMD signal is high and RDY is high.
18.3.4.1 Write Handshaking
For details on the write handshaking sequence, refer to the following figure and table.
SAM E70/S70/V70/V71 Family
Fast Flash Programming Interface (FFPI)
© 2019 Microchip T
echnology Inc.
Datasheet
DS60001527D-page 85










