Datasheet

Table 59-49. Analog Outputs
Symbol Parameter Conditions Min. Typ. Max. Unit
R
LOAD
Output Resistor
Load
Output load resistor 5 – – kOhm
C
LOAD
Output Capacitor
Load
Output load capacitor – – 50 pF
V
DACx_MIN
Minimum Output
V
oltage on DACx
Code = 0x000 No R
LOAD
, C
LOAD
= 50 pF,
DACC_ACR.IBCTLCHx =3
– 0.1 0.5 %. V
VREFP
V
DACx_MAX
Maximum Output
Voltage on DACx
Code = 0xFFF No R
LOAD
C
LOAD
= 50 pF,
DACC_ACR.IBCTLCHx =3
99.5 99.9 – %. V
VREFP
FSR Full Scale Range Code = 0x000 to 0xFFF No R
LOAD
C
LOAD
= 50 pF,
DACC_ACR.IBCTLCHx =3
99 99.8 – %. V
VREFP
R
OUT
DAC Output
Resistor
0.3 < V
DACx
< V
DDIN
-0.3V,
DACC_ACR.IBCTLCHx =3, R
LOAD
= 5 KOhm
– 15 – Ohm
V
DACx
> V
DDIN
-0.3V, DACC_ACR.IBCTLCHx =3,
R
LOAD
= 5 kOhm
– 550 – Ohm
V
DACx
< 0.3V, DACC_ACR.IBCTLCHx = 3,
RLOAD
= 5 kOhm
– 550 – Ohm
V
DACx
= V
VREFP
/2, DACC_ACR.IBCTLCHx = 0
(Bypass mode, buffer off), No R
LOAD
– 300 – kOhm
59.12 Embedded Flash Characteristics
Table 59-50. Flash Characteristics
Parameter Conditions Min. Typ. Max. Unit
ERASE Line Assertion
T
ime
– 230 – – ms
Program Cycle Time Write Page – 1.5 – ms
Erase Page – 10 50 ms
Erase Small Sector (8 Kbytes) – 80 200 ms
Erase Larger Sector (112 or 128 Kbytes) 800 1500 ms
Full Chip Erase 512 Kbytes – 3 6 s
1 Mbytes – 6 12 s
2 Mbytes (only for SAMV71) – 13 24 s
Data Retention At T
A
= 85°C, after 10K cycles (see Note 1) 10 – – Years
At T
A
= 85°C, after 1K cycles (see Note 1) 20 – – Years
At T
A
= 105°C, after 1K cycles (see Note 1) 5.5 – – Years
Endurance Write/Erase cycles per page, block or sector at 25°C 100K Cycles
Write/Erase cycles per page, block or sector at 105°C 10K – – Cycles
SAM E70/S70/V70/V71 Family
Electrical Characteristics for SAM E70/S70
© 2019 Microchip T
echnology Inc.
Datasheet
DS60001527D-page 1889