Datasheet

where C
PCB
is the capacitance of the printed circuit board (PCB) track layout from the crystal to the pin.
58.4.4 32.768 kHz Crystal Characteristics
Table 58-21. 32.768 kHz Crystal Characteristics
Symbol Parameter Conditions Min. Typ. Max. Unit
ESR Equivalent Series Resistor Crystal at 32.768 kHz – 50 100 kOhm
C
M
Motional Capacitance Crystal at 32.768 kHz 2 – 4 fF
C
SHUNT
Shunt Capacitance Crystal at 32.768 kHz 0.6 – 2 pF
C
CR
YSTAL
Allowed Crystal Capacitance Load From crystal specification 6 – 12.5 pF
P
ON
Drive Level – – – 0.2 µW
58.4.5 XIN32 Clock Characteristics in Bypass Mode
Table 58-22. XIN32 Clock Characteristics in Bypass Mode
Symbol Parameter Conditions Min. Typ. Max. Unit
1/(t
CPXIN
) XIN32 Clock Frequency (see Note) – – 32 kHz
t
CHXIN
XIN32 Clock High Half-period (see Note) 15 – – ns
t
CLXIN
XIN32 Clock Low Half-period (see Note) 15 – – ns
V
XIN_IL
V
XIN
Input Low-level V
oltage (see Note) Min of V
IL
for CLOCK
pad
– Max of V
IL
for CLOCK
pad
V
V
XIN_IH
V
XIN
Input High-level Voltage (see Note) Min of V
IH
for CLOCK
pad
– Max of V
IH
for CLOCK
pad
V
Note: These characteristics apply only when the 32.768 kHz crystal oscillator is in Bypass mode.
58.4.6 3 to 20 MHz Crystal Oscillator Characteristics
Table 58-23. 3 to 20 MHz Crystal Oscillator Characteristics
Symbol Parameter Conditions Min. Typ. Max. Unit
f
OSC
Operating Frequency Normal mode with crystal 3 – 20 MHz
t
ST
ART
Startup Time 3 MHz, C
SHUNT
= 3 pF – – 40 ms
12 MHz, C
SHUNT
= 7 pF with C
M
= 1.6 fF – – 6 ms
20 MHz, C
SHUNT
= 7 pF with C
M
= 1.6 fF – – 5.7 ms
I
DDON
Current Consumption (on VDDIO) 3 MHz – 230 – µA
12 MHz – 390 – µA
20 MHz – 450 – µA
C
L
Internal Equivalent Load Capacitance Integrated Load Capacitance 7.5 9 10.5 pF
(X
IN
and X
OUT
in series)
SAM E70/S70/V70/V71 Family
Electrical Characteristics for SAM ...
© 2019 Microchip T
echnology Inc.
Datasheet
DS60001527D-page 1830