Datasheet
...........continued
Symbol Parameter Conditions Min. Typ. Max. Unit
I
IH
High-level Input Current Pulldown OFF -1 – 1 µA
Pulldown ON 10 – 55
R
SERIAL
Serial Resistor GPIO_MLB – 9 – Ohm
GPIO_AD, GPIO_CLK – 14 –
GPIO, CLOCK, RST, TEST – 26 –
Table 58-5. Voltage Regulator Characteristics
Symbol Parameter Conditions Min. Typ. Max. Unit
V
DDOUT
DC Output Voltage
Normal mode, I
LOAD
= 100 mA 1.2 1.23 1.26
V
Standby mode – 0 –
I
LOAD
Maximum DC Output Current – – 150 mA
C
DIN
Input Decoupling Capacitor (1) – 4.7 – µF
C
DOUT
Output Decoupling Capacitor
(2) – 1 – µF
ESR – – 2 Ohm
t
ON
Turn-on Time C
DOUT
= 1 µF
, V
DDOUT
reaches DC output voltage – 1 2.5 ms
Note:
1.
A 4.7 μF (±20%) or higher ceramic capacitor must be connected between V
DDIN
and the closest GND pin of
the device. This large decoupling capacitor is mandatory to reduce startup current, improving transient
response and noise rejection.
2. To ensure stability, an external 1 μF (±20%) output capacitor, C
DOUT
, must be connected between V
DDOUT
and
the closest GND pin of the device. Solid tantalum and multilayer ceramic capacitors are suitable as output
capacitors. A 100 nF bypass capacitor between V
DDOUT
and the closest GND pin of the device helps decrease
output noise and improves the load transient response.
Table 58-6. Core Power Supply Brownout Detector Characteristics
Symbol Parameter Conditions Min. Typ. Max. Unit
V
T
-
Supply Falling Threshold (see Note 1) – 0.97 1.0 1.04 V
V
hys
Hysteresis Voltage – – 25 50 mV
t
START
Startup Time From disabled state to enabled state – – 400 µs
Note:
1.
The Brownout Detector is configured using the BODDIS bit in the SUPC_MR register.
Figure 58-1. Core Brownout Output Waveform
t
VDDCORE
V
T-
V
hys
BOD OUTPUT
t
td+td-
SAM E70/S70/V70/V71 Family
Electrical Characteristics for SAM ...
© 2019 Microchip T
echnology Inc.
Datasheet
DS60001527D-page 1821










