Datasheet

22.4.3.2.1 Full Page Programming
To program a full page, all the bits of the page must be erased before writing the latch buffer and issuing the WP
command. The latch buf
fer must be written in ascending order, starting from the first address of the page. See Figure
22-8.
22.4.3.2.2 Partial Page Programming
To program only part of a page using the WP command, the following constraints must be respected:
• Data to be programmed must be contained in integer multiples of 128-bit address-aligned words.
• 128-bit words can be programmed only if all the corresponding bits in the Flash array are erased (at logical
value ‘1’).
See 22.4.3.2.4 Programming Bytes.
22.4.3.2.3 Optimized Partial Page Programming
The EEFC automatically detects the number of 128-bit words to be programmed. If only one 128-bit aligned word is
to be programmed in the Flash array
, the process is optimized to reduce the time needed for programming.
If several 128-bit words are to be programmed, a standard page programming operation is performed.
See Figure 22-10.
22.4.3.2.4 Programming Bytes
Individual bytes can be programmed using the Partial Page Programming mode.
In this case, an area of 128 bits must be reserved for each byte.
Refer to the Figure 22-1
1
SAM E70/S70/V70/V71 Family
Enhanced Embedded Flash Controller (EEFC)
© 2019 Microchip T
echnology Inc.
Datasheet
DS60001527D-page 135