Datasheet

22.6.4.2 RWWEE Read
Reading from the RWW EEPROM address space is performed via the AHB bus by addressing the
RWWEE address space directly.
Read timings are similar to regular NVM read timings when access size is Byte or half-Word. The AHB
data phase is twice as long in case of full-Word-size access.
It is not possible to read the RWWEE area while the NVM main array is being written or erased, whereas
the RWWEE area can be written or erased while the main array is being read.
The RWWEE address space is not cached, therefore it is recommended to limit access to this area for
performance and power consumption considerations.
22.6.4.3 NVM Write
The NVM Controller requires that an erase must be done before programming. The entire NVM main
address space and the RWWEE address space can be erased by a debugger Chip Erase command.
Alternatively, rows can be individually erased by the Erase Row command or the RWWEE Erase Row
command to erase the NVM main address space or the RWWEE address space, respectively.
After programming the NVM main array, the region that the page resides in can be locked to prevent
spurious write or erase sequences. Locking is performed on a per-region basis, and so, locking a region
will lock all pages inside the region.
Data to be written to the NVM block are first written to and stored in an internal buffer called the page
buffer. The page buffer contains the same number of bytes as an NVM page. Writes to the page buffer
must be 16 or 32 bits. 8-bit writes to the page buffer are not allowed and will cause a system exception.
Both the NVM main array and the RWWEE array share the same page buffer. Writing to the NVM block
via the AHB bus is performed by a load operation to the page buffer. For each AHB bus write, the address
is stored in the ADDR register. After the page buffer has been loaded with the required number of bytes,
the page can be written to the NVM main array or the RWWEE array by setting CTRLA.CMD to 'Write
Page' or 'RWWEE Write Page', respectively, and setting the key value to CMDEX. The LOAD bit in the
STATUS register indicates whether the page buffer has been loaded or not. Before writing the page to
memory, the accessed row must be erased.
Automatic page writes are enabled by writing the manual write bit to zero (CTRLB.MANW=0). This will
trigger a write operation to the page addressed by ADDR when the last location of the page is written.
Because the address is automatically stored in ADDR during the I/O bus write operation, the last given
address will be present in the ADDR register. There is no need to load the ADDR register manually,
unless a different page in memory is to be written.
22.6.4.3.1 Procedure for Manual Page Writes (CTRLB.MANW=1)
The row to be written to must be erased before the write command is given.
• Write to the page buffer by addressing the NVM main address space directly
• Write the page buffer to memory: CTRL.CMD='Write Page' and CMDEX
• The READY bit in the INTFLAG register will be low while programming is in progress, and access
through the AHB will be stalled
22.6.4.3.2 Procedure for Automatic Page Writes (CTRLB.MANW=0)
The row to be written to must be erased before the last write to the page buffer is performed.
Note that partially written pages must be written with a manual write.
• Write to the page buffer by addressing the NVM main address space directly.
SAM D21 Family
NVMCTRL – Nonvolatile Memory Controller
© 2018 Microchip Technology Inc.
Datasheet Complete
DS40001882D-page 389