Datasheet

Note:
1. The EEPROM emulation is a software emulation described in the Application Note AT03265: SAM
D10/D11/D20/D21/R/L/C EEPROM Emulator (EEPROM) Service.
2. An endurance cycle is a write and an erase operation.
Table 40-43. NVM Characteristics
Symbol Parameter Conditions Min. Typ. Max. Units
t
FPP
Page programming time - - - 2.5 ms
t
FRE
Row erase time - - - 6 ms
t
FCE
DSU chip erase time (CHIP_ERASE) - - - 240 ms
40.11 Oscillator Characteristics
40.11.1 Crystal Oscillator (XOSC) Characteristics
Table 40-44. Digital Clock Characteristics
Symbol Parameter Conditions Min. Typ. Max Units
f
CPXIN
XIN clock frequency digital mode - - 32 MHz
Crystal Oscillator Characteristics
The following table describes the characteristics for the oscillator when a crystal is connected between
XIN and XOUT. The user must choose a crystal oscillator where the crystal load capacitance CL is within
the range given in the table. The exact value of CL can be found in the crystal datasheet. The
capacitance of the external capacitors (CLEXT) can then be computed as follows:
C
LEXT
= 2(C
L
-C
STRAY
-C
SHUNT
)
Where C
STRAY
is the capacitance of the pins and PCB, C
SHUNT
is the shunt capacitance of the crystal.
Table 40-45. Crystal Oscillator Characteristics
Symbol Parameter Conditions Min. Typ. Max. Units
f
OUT
Crystal oscillator
frequency
- 0.4 - 32 MHz
ESR Crystal Equivalent Series
Resistance - SF = 3
f = 0.455 MHz, C
L
= 100pF,
XOSC.GAIN = 0
- - 5.6K Ω
f = 2MHz, C
L
=20 pF XOSC.GAIN=0 - - 330
f = 4MHz, C
L
=20 pF XOSC.GAIN=1 - - 240
f = 8MHz, C
L
=20 pF XOSC.GAIN=2 - - 105
f = 16MHz, C
L
=20 pF XOSC.GAIN=3 - - 60
f = 32MHz, C
L
=18 pF XOSC,GAIN=4 - - 55
C
XIN
Parasitic load capacitor - - 5.9 - pF
C
XOUT
- - 3.2 - pF
SAM D21 Family
AEC-Q100 125°C Specifications
© 2018 Microchip Technology Inc.
Datasheet Complete
DS40001882D-page 1125