Datasheet

...........continued
Symbol Parameter Conditions Min. Typ. Max. Units
Variation over V
DDANA
voltage
V
DDANA
=1.62V to 3.6V -0.4 1.4 3 mV/V
Temperature Sensor
accuracy
Using the method described in the
37.11.8.2 Software-based Refinement of
the Actual Temperature
-13.0 - 13.0 °C
Note: 1. These values are based on characterization. These values are not covered by test limits in
production.
39.7 NVM Characteristics
Table 39-28. Maximum Operating Frequency
V
DD
range NVM Wait States Maximum Operating Frequency Units
1.62V to 2.7V 0 14 MHz
1 28
2 40
2.7V to 3.63V 0 24
1 40
Note that on this flash technology, a max number of 8 consecutive write is allowed per row. Once this
number is reached, a row erase is mandatory.
Table 39-29. Flash Endurance and Data Retention
Symbol Parameter Conditions Min. Typ. Max. Units
Ret
NVM25k
Retention after up to 25k Average ambient 55°C 10 50 - Years
Ret
NVM2.5k
Retention after up to 2.5k Average ambient 55°C 20 100 - Years
Ret
NVM100
Retention after up to 100 Average ambient 55°C 25 >100 - Years
Cyc
NVM
Cycling Endurance
(1)
-40°C < Ta < 125°C 25k 150k - Cycles
Note: 1. An endurance cycle is a write and an erase operation.
Table 39-30. EEPROM Emulation
(1)
Endurance and Data Retention
Symbol Parameter Conditions Min. Typ. Max. Units
Ret
EEPROM100k
Retention after up to 100k Average ambient 55°C 10 50 - Years
Ret
EEPROM10k
Retention after up to 10k Average ambient 55°C 20 100 - Years
Cyc
EEPROM
Cycling Endurance
(2)
-40°C < Ta < 125°C 100k 600k - Cycles
Notes: 1. The EEPROM emulation is a software emulation described in the App note AT03265.
2. An endurance cycle is a write and an erase operation.
SAM D21 Family
Electrical Characteristics at 125°C
© 2018 Microchip Technology Inc.
Datasheet Complete
DS40001882D-page 1086