Datasheet

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Mode Conditions T
A
Typ. Max. Units
STANDBY
(Device Variant B,
Die Revision E)
XOSC32K running
, RTC running at 1kHz
(1)
125°C 348.0 850.0 μA
XOSC32K and RTC stopped
(1)
125°C 346.0 848.0
STANDBY
(Device Variant B
and C, Die
Revision F)
XOSC32K running
, RTC running at 1kHz
(1)
125°C 294.0 782.0 μA
XOSC32K and RTC stopped
(1)
125°C 292.0 780.0
Note:
1. Measurements were done with SYSCTRL->VREG.bit.RUNSTDBY = 1
Table 39-8. Current Consumption (Silicon Revision G)
Mode conditions Ta Vcc Typ. Max. Units
ACTIVE
CPU running a While 1 algorithm
125°C
3,3V 3.5 4.0
mA
1,8V 3.5 4.0
CPU running a While 1 algorithm, with
GCLKIN as reference
3,3V
57*Freq
+395
55*Freq
+1076
CPU running a Fibonacci algorithm
3,3V 4.5 5.0
1,8V 4.5 5.0
CPU running a Fibonacci algorithm, with
GCLKIN as reference
3,3V
75*Freq
+397
72*Freq
+1076
CPU running a CoreMark algorithm
3,3V 5.1 5.7
1,8V 4.9 5.5
CPU running a CoreMark algorithm, with
GCLKIN as reference
3,3V
88*Freq
+399
85*Freq
+1075
IDLE0 3,3V 2.0 2.5
IDLE1 3,3V 1.4 1.9
IDLE2 3,3V 1.1 1.7
STANDBY
XOSC32K running, RTC running at 1kHz
RTC running at 1kHz (1)
3,3V 294.0 782.0
µA
XOSC32K and RTC
stopped (1)
3,3V 292.0 780.0
Note:
1. Measurements done with VREG.bit.RUNSTDBY = 1.
SAM D21 Family
Electrical Characteristics at 125°C
© 2018 Microchip Technology Inc.
Datasheet Complete
DS40001882D-page 1072