Datasheet

...........continued
Symbol Parameter Conditions Min. Typ. Max. Units
Ret
EEPROM10k
Retention after up to 10k Average ambient 55°C 20 100 - Years
Cyc
EEPROM
Cycling Endurance
(2)
-40°C < Ta < 105°C 100k 600k - Cycles
1. The EEPROM emulation is a software emulation described in the App note AT03265.
2. An endurance cycle is a write and an erase operation.
38.8 Oscillators Characteristics
38.8.1 Crystal Oscillator (XOSC) Characteristics
38.8.1.1 Digital Clock Characteristics
The following table describes the characteristics for the oscillator when a digital clock is applied on XIN.
Table 38-21. Digital Clock Characteristics
Symbol Parameter Conditions Min. Typ. Max. Units
f
CPXIN
XIN clock frequency - - 32 MHz
38.8.1.2 Crystal Oscillator Characteristics
The following table describes the characteristics for the oscillator when a crystal is connected between
XIN and XOUT as shown in Figure 38-4. The user must choose a crystal oscillator where the crystal load
capacitance C
L
is within the range given in the table. The exact value of C
L
can be found in the crystal
datasheet. The capacitance of the external capacitors (C
LEXT
) can then be computed as follows:
C
LEXT
= 2 C
L
 C
STRAY
 C
SHUNT
where C
STRAY
is the capacitance of the pins and PCB, C
SHUNT
is the shunt capacitance of the crystal.
Table 38-22. Crystal Oscillator Characteristics
Symbol Parameter Conditions Min. Typ. Max. Units
f
OUT
Crystal oscillator frequency 0.4 - 32 MHz
ESR Crystal Equivalent Series
Resistance
Safety Factor = 3
The AGC doesn’t have any
noticeable impact on these
measurements.
f = 0.455 MHz, C
L
= 100pF
XOSC.GAIN = 0
- - 5.6K Ω
f = 2MHz, C
L
= 20pF
XOSC.GAIN = 0
- - 416
f = 4MHz, C
L
= 20pF
XOSC.GAIN = 1
- - 243
f = 8 MHz, C
L
= 20pF
XOSC.GAIN = 2
- - 138
f = 16 MHz, C
L
= 20pF
XOSC.GAIN = 3
- - 66
f = 32MHz, C
L
= 18pF
XOSC.GAIN = 4
- - 56
SAM D21 Family
Electrical Characteristics at 105°C
© 2018 Microchip Technology Inc.
Datasheet Complete
DS40001882D-page 1057