Datasheet

...........continued
Symbol Parameter Conditions Min. Typ. Max. Units
Offset Hysteresis = 0, Fast mode -15 0.0 +15 mV
Hysteresis = 0, Low power mode -25 0.0 +25 mV
Hysteresis Hysteresis = 1, Fast mode 20 50 85 mV
Hysteresis = 1, Low power mode 15 40 75 mV
Propagation delay Changes for V
ACM
=V
DDANA
/2
100mV overdrive, Fast mode
- 90 180 ns
Changes for V
ACM
=V
DDANA
/2
100mV overdrive, Low power mode
- 282 520 ns
t
STARTUP
Startup time Enable to ready delay
Fast mode
- 1 2.6 μs
Enable to ready delay
Low power mode
- 14 22 μs
V
SCALE
INL
(3)
-1.4 0.75 1.4 LSB
DNL
(3)
-0.9 0.25 0.9 LSB
Offset Error
(1)(2)
-0.20 0.26 +0.92 LSB
Gain Error
(1)(2)
-0.89 0.215 0.89 LSB
1. According to the standard equation V(X)=V
LSB
*(X+1); V
LSB
=V
DDANA
/64
2. Data computed with the Best Fit method
3. Data computed using histogram
38.7 NVM Characteristics
Note that on this flash technology, a max number of four consecutive write is allowed per row. Once this
number is reached, a row erase is mandatory.
Table 38-19. Flash Endurance and Data Retention
Symbol Parameter Conditions Min. Typ. Max. Units
Ret
NVM25k
Retention after up to 25k Average ambient 55°C 10 50 - Years
Ret
NVM2.5k
Retention after up to 2.5k Average ambient 55°C 20 100 - Years
Ret
NVM100
Retention after up to 100 Average ambient 55°C 25 >100 - Years
Cyc
NVM
Cycling Endurance
(1)
-40°C < Ta < 105°C 25k 150k - Cycles
1. An endurance cycle is a write and an erase operation.
Table 38-20. EEPROM Emulation
(1)
, Endurance and Data Retention
Symbol Parameter Conditions Min. Typ. Max. Units
Ret
EEPROM100k
Retention after up to 100k Average ambient 55°C 10 50 - Years
SAM D21 Family
Electrical Characteristics at 105°C
© 2018 Microchip Technology Inc.
Datasheet Complete
DS40001882D-page 1056