Datasheet

38. Electrical Characteristics at 105°C
38.1 Disclaimer
All typical values are measured at T = 25°C unless otherwise specified. All minimum and maximum
values are valid across operating temperature and voltage unless otherwise specified.
38.2 Absolute Maximum Ratings
Stresses beyond those listed in table below may cause permanent damage to the device. This is a stress
rating only and functional operation of the device at these or other conditions beyond those indicated in
the operational sections of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability.
Table 38-1. Absolute Maximum Ratings
Symbol Parameter Condition Min. Max. Units
V
DD
Power supply voltage 0 3.8 V
I
DD
Current into a V
DD
pin - 92
(1)
mA
I
GND
Current out of a GND pin - 130
(1)
mA
V
PIN
Pin voltage with respect to GND and V
DD
GND-0.3V V
DD
+0.3V V
T
storgae
Storage temperature -60 150 °C
1. Maximum source current is 46mA and maximum sink current is 65mA per cluster. A cluster is a
group of GPIOs. Also note that each VDD/GND pair is connected to two clusters so current
consumption through the pair will be a sum of the clusters source/sink currents.
Related Links
7.2.4 GPIO Clusters
38.3 General Operating Ratings
The device must operate within the ratings listed in the table below in order for all other electrical
characteristics and typical characteristics of the device to be valid.
Table 38-2. General Operating Conditions
Symbol Parameter Condition Min. Typ. Max. Units
V
DD
Power supply voltage 1.62
(1)
3.3 3.63 V
V
DDANA
Analog supply voltage 1.62
(1)
3.3 3.63 V
T
A
Temperature range -40 25 105 °C
T
J
Junction temperature - - 125 °C
1. With BOD33 disabled. If the BOD33 is enabled, refer to the BOD33 characteristics.
Related Links
SAM D21 Family
Electrical Characteristics at 105°C
© 2018 Microchip Technology Inc.
Datasheet Complete
DS40001882D-page 1042