Datasheet

Table 37-46. NVM Characteristics (Device Variant B,C, D and L)
Symbol Parameter Conditions Min. Typ. Max. Units
t
FPP
Page programming time - - - 2.5 ms
t
FRE
Row erase time - - 1.2 6 ms
t
FCE
DSU chip erase time (CHIP_ERASE) - - - 240 ms
37.13 Oscillators Characteristics
37.13.1 Crystal Oscillator (XOSC) Characteristics
37.13.1.1 Digital Clock Characteristics
The following table describes the characteristics for the oscillator when a digital clock is applied on XIN.
Table 37-47. Digital Clock Characteristics
Symbol Parameter Conditions Min. Typ. Max. Units
f
CPXIN
XIN clock frequency - - 32 MHz
37.13.1.2 Crystal Oscillator Characteristics
The following table describes the characteristics for the oscillator when a crystal is connected between
XIN and XOUT . The user must choose a crystal oscillator where the crystal load capacitance C
L
is within
the range given in the table. The exact value of C
L
can be found in the crystal datasheet. The capacitance
of the external capacitors (C
LEXT
) can then be computed as follows:
C
LEXT
= 2 C
L
+  C
STRAY
 C
SHUNT
where C
STRAY
is the capacitance of the pins and PCB, C
SHUNT
is the shunt capacitance of the crystal.
Table 37-48. Crystal Oscillator Characteristics
Symbol Parameter Conditions Min. Typ. Max. Units
f
OUT
Crystal oscillator frequency 0.4 - 32 MHz
ESR Crystal Equivalent Series
Resistance
Safety Factor = 3
The AGC doesn’t have any
noticeable impact on these
measurements.
f = 0.455 MHz, C
L
= 100pF
XOSC.GAIN = 0
- - 5.6K Ω
f = 2MHz, C
L
= 20pF
XOSC.GAIN = 0
- - 416
f = 4MHz, C
L
= 20pF
XOSC.GAIN = 1
- - 243
f = 8 MHz, C
L
= 20pF
XOSC.GAIN = 2
- - 138
f = 16 MHz, C
L
= 20pF
XOSC.GAIN = 3
- - 66
f = 32MHz, C
L
= 18pF
XOSC.GAIN = 4
- - 56
C
XIN
Parasitic capacitor load - 5.9 - pF
SAM D21 Family
Electrical Characteristics
© 2018 Microchip Technology Inc.
Datasheet Complete
DS40001882D-page 1015