Datasheet

37.12 NVM Characteristics
Table 37-42. Maximum Operating Frequency
V
DD
range NVM Wait States Maximum Operating Frequency Units
1.62V to 2.7V 0 14 MHz
1 28
2 42
3 48
2.7V to 3.63V 0 24
1 48
Note that on this flash technology, a max number of 8 consecutive write is allowed per row. Once this
number is reached, a row erase is mandatory.
Table 37-43. Flash Endurance and Data Retention
Symbol Parameter Conditions Min. Typ. Max. Units
Ret
NVM25k
Retention after up to 25k Average ambient 55°C 10 50 - Years
Ret
NVM2.5k
Retention after up to 2.5k Average ambient 55°C 20 100 - Years
Ret
NVM100
Retention after up to 100 Average ambient 55°C 25 >100 - Years
Cyc
NVM
Cycling Endurance
(1)
-40°C < Ta < 85°C 25k 150k - Cycles
1. An endurance cycle is a write and an erase operation.
Table 37-44. EEPROM Emulation
(1)
Endurance and Data Retention
Symbol Parameter Conditions Min. Typ. Max. Units
Ret
EEPROM100k
Retention after up to 100k Average ambient 55°C 10 50 - Years
Ret
EEPROM10k
Retention after up to 10k Average ambient 55°C 20 100 - Years
Cyc
EEPROM
Cycling Endurance
(2)
-40°C < Ta < 85°C 100k 600k - Cycles
1. The EEPROM emulation is a software emulation described in the App note AT03265.
2. An endurance cycle is a write and an erase operation.
Table 37-45. NVM Characteristics (Device Variant A)
Symbol Parameter Conditions Min. Typ. Max. Units
t
FPP
Page programming time - - - 2.5 ms
t
FRE
Row erase time - - - 6 ms
t
FCE
DSU chip erase time (CHIP_ERASE) - - - 240 ms
SAM D21 Family
Electrical Characteristics
© 2018 Microchip Technology Inc.
Datasheet Complete
DS40001882D-page 1014