Datasheet

...........continued
Symbol Parameter Conditions Min. Typ. Max. Units
DNL Differential non-linearity V
REF
= Ext 1.0V V
DD
= 1.6V +/-0.9 +/-1.2 +/-1.5 LSB
V
DD
= 3.6V +/-0.9 +/-1.1 +/-1.2
V
REF
= V
DDANA
V
DD
= 1.6V +/-1.1 +/-1.5 +/-1.7
V
DD
= 3.6V +/-1.0 +/-1.1 +/-1.2
V
REF
= INT1V V
DD
= 1.6V +/-1.1 +/-1.4 +/-1.5
V
DD
= 3.6V +/-1.0 +/-1.5 +/-1.6
Gain error Ext. V
REF
+/-1.5 +/-5 +/-10 mV
Offset error Ext. V
REF
+/-2 +/-3 +/-6 mV
Table 37-35. Accuracy Characteristics
(1)
(Device Variant B,C, D and L)
Symbol Parameter Conditions Min. Typ. Max. Units
RES Input resolution - - 10 Bits
INL Integral non-linearity V
REF
= Ext 1.0V V
DD
= 1.6V 0.7 0.75 2 LSB
V
DD
= 3.6V 0.6 0.65 1.5
V
REF
= V
DDANA
V
DD
= 1.6V 0.6 0.85 2
V
DD
= 3.6V 0.5 0.8 1.5
V
REF
= INT1V V
DD
= 1.6V 0.5 0.75 1.5
V
DD
= 3.6V 0.7 0.8 1.5
DNL Differential non-linearity V
REF
= Ext 1.0V V
DD
= 1.6V +/-0.3 +/-0.4 +/-1.0 LSB
V
DD
= 3.6V +/-0.25 +/-0.4 +/-0.75
V
REF
= V
DDANA
V
DD
= 1.6V +/-0.4 +/-0.55 +/-1.5
V
DD
= 3.6V +/-0.2 +/-0.3 +/-0.75
V
REF
= INT1V V
DD
= 1.6V +/-0.5 +/-0.7 +/-1.5
V
DD
= 3.6V +/-0.4 +/-0.7 +/-1.5
Gain error Ext. V
REF
+/-0.5 +/-5 +/-10 mV
Offset error Ext. V
REF
+/-2 +/-1.5 +/-8 mV
Note: 1. All values measured using a conversion rate of 350ksps.
SAM D21 Family
Electrical Characteristics
© 2018 Microchip Technology Inc.
Datasheet Complete
DS40001882D-page 1008