Datasheet

Table 37-21. BOD33 LEVEL Value (Silicon Revisions A, B, C, D, E, and F)
Symbol BOD33.LEVEL Conditions Min. Typ. Max. Units
V
BOD+
6 Hysteresis ON - 1.715 1.745
V
7 - 1.750 1.779
39 - 2.84 2.92
48 - 3.2 3.3
V
BOD-
or
V
BOD
6 Hysteresis ON
or
Hysteresis OFF
1.62 1.64 1.67
7 1.64 1.675 1.71
39 2.72 2.77 2.81
48 3.0 3.07 3.2
Note: See chapter Memories table NVM User Row Mapping for the BOD33 default value settings.
Table 37-22. BOD33 LEVEL Value (Silicon Revision G)
Symbol BOD33.LEVEL Conditions Min. Typ. Max. Units
VBOD+
6
Hysteresis ON
- 1.709 1.748
V
7 - 1.747 1.795
39 - 2.872 2.950
48 - 3.201 3.340
VBOD- or VBOD
6
Hysteresis ON or Hysteresis OFF
1.590 1.638 1.680
7 1.620 1.670 1.710
39 2.680 2.764 2.840
48 2.980 3.071 3.200
Note: Refer to NVM User Row Mapping for the BOD33 default value settings.
Table 37-23. BOD33 Characteristics
Symbol Parameter Conditions Min. Typ. Max. Units
Step size, between
adjacent values in
BOD33.LEVEL
- - 34 - mV
V
HYST
V
BOD+
- V
BOD-
Hysteresis ON 35 - 170 mV
t
DET
Detection time Time with V
DDANA
< V
TH
necessary to generate a
reset signal
- 0.9
(1)
- μs
I
BOD33
Current consumption Idle2,Continuous mode, VDD=3V - 25 50
μAIdle2, Sampling mode, VDD=1.8V - 0.034 1.62
STANDBY,Sample Mode, VDD=3.3V - 0.132 1
SAM D21 Family
Electrical Characteristics
© 2018 Microchip Technology Inc.
Datasheet Complete
DS40001882D-page 1000