Datasheet

461
SAM3X / SAM3A [DATASHEET]
Atmel-11057C-ATARM-SAM3X-SAM3A-Datasheet_23-Mar-15
25.16.5.2 Program Page
Figure 25-38. Program Page Flow Chart
Writing the ECC can not be done using the NFC so it needs to be done “manually”.
Note that instead of using the interrupt one can poll the NFCBUSY Flag.
For more information on the NFC Control Register, see Section 25.16.2.2 ”NFC Address Command”.
25.17 SMC Error Correcting Code Functional Description
A page in NAND Flash and SmartMedia memories contains an area for main data and an additional area used for
redundancy (ECC). The page is organized in 8-bit or 16-bit words. The page size corresponds to the number of
words in the main area plus the number of words in the extra area used for redundancy.
Over time, some memory locations may fail to program or erase properly. In order to ensure that data is stored
properly over the life of the NAND Flash device, NAND Flash providers recommend to utilize either 1 ECC per 256
bytes of data, 1 ECC per 512 bytes of data or 1 ECC for all of the page.
The only configurations required for ECC are the NAND Flash or the SmartMedia page size (528/2112/4224) and
the type of correction wanted (1 ECC for all the page/1 ECC per 256 bytes of data /1 ECC per 512 bytes of data).
Configure Device,
writing in the User
interface
Write Data in the NFC
SRAM (CPU or DMA)
Enable XFRDONE
Write the Command
Register through the
AHB interface
Write ECC
Wait for interrupt
Wait for Ready/Busy
interrupt