Datasheet

SAM3X / SAM3A [DATASHEET]
Atmel-11057C-ATARM-SAM3X-SAM3A-Datasheet_23-Mar-15
36
Multiple device adaptability
Control signals programmable setup, pulse and hold time for each Memory Bank
Multiple Wait State Management
Programmable Wait State Generation
External Wait Request
Programmable Data Float Time
Slow Clock mode supported
7.3.3 NAND Flash Controller
Handles automatic Read/write transfer through 4224 bytes SRAM buffer
DMA support
Supports SLC NAND Flash technology
Programmable timing on a per chip select basis
Programmable Flash Data width 8-bit or 16-bit
7.3.4 NAND Flash Error Corrected Code Controller
Integrated in the NAND Flash Controller
Single bit error correction and 2-bit Random detection.
Automatic Hamming Code Calculation while writing
ECC value available in a register
Automatic Hamming Code Calculation while reading
Error Report, including error flag, correctable error flag and word address being detected erroneous
Support 8- or 16-bit NAND Flash devices with 512-, 1024-, 2048- or 4096-byte pages
7.3.5 SDR-SDRAM Controller (217-pin SAM3X8H
(l)
only)
Numerous configurations supported
2K, 4K, 8K Row Address Memory Parts
SDRAM with two or four Internal Banks
SDRAM with 16-bit Data Path
Programming facilities
Word, half-word, byte access
Automatic page break when Memory Boundary has been reached
Multibank Ping-pong Access
Timing parameters specified by software
Automatic refresh operation, refresh rate is programmable
Energy-saving capabilities
Self-refresh, and Low-power Modes supported
Error detection
Refresh Error Interrupt
SDRAM Power-up Initialization by software
Latency is set to two clocks (CAS Latency of 1, 3 Not Supported)
Auto Precharge Command not used
Mobile SDRAM supported (except for low-power extended mode and deep power-down mode)
Note: 1. This device is not commercially available. Mounted only on the SAM3X-EK evaluation kit.