Datasheet

311
SAM3X / SAM3A [DATASHEET]
Atmel-11057C-ATARM-SAM3X-SAM3A-Datasheet_23-Mar-15
Note: 1. Applies to 256 kbytes Flash version (dual EEFC)
19.2.3 Entering Programming Mode
The following algorithm puts the device in Parallel Programming Mode:
 Apply GND, TST, NRTSB, FWUP, PA0, PA1, PA2, PA3, NRST and the supplies as described in Table 19-1,
“Signal Description List,” on page 309.
 Wait for 20 ms
 Toggle NRST from 0 to 1 (GND to VDDIO).
 Apply XIN clock
 Wait for 20 ms
 Start a read or write handshaking.
19.2.4 Programmer Handshaking
A handshake is defined for read and write operations. When the device is ready to start a new operation (RDY
signal set), the programmer starts the handshake by clearing the NCMD signal. The handshaking is achieved once
NCMD signal is high and RDY is high.
19.2.4.1 Write Handshaking
For details on the write handshaking sequence, refer to Figure 19-2 and Table 19-5.
Table 19-4. Command Bit Coding
DATA[15:0] Symbol Command Executed
0x0011 READ Read Flash
0x0012 WP Write Page Flash
0x0022 WPL Write Page and Lock Flash
0x0032 EWP Erase Page and Write Page
0x0042 EWPL Erase Page and Write Page then Lock
0x0013 EA Erase All
0x0014 SLB Set Lock Bit
0x0024 CLB Clear Lock Bit
0x0015 GLB Get Lock Bit
0x0034 SGPB Set General Purpose NVM bit
0x0044 CGPB Clear General Purpose NVM bit
0x0025 GGPB Get General Purpose NVM bit
0x0054 SSE Set Security Bit
0x0035 GSE Get Security Bit
0x001F WRAM Write Memory
0x0016 SEFC Select EEFC Controller
(1)
0x001E GVE Get Version