Datasheet

DRAFT
SAM3X / SAM3A [DATASHEET]
Atmel-11057C-ATARM-SAM3X-SAM3A-Datasheet_23-Mar-15
1398
45.4.7 3 to 20 MHz Crystal Characteristics
45.4.8 3 to 20 MHz XIN Clock Input Characteristics in Bypass Mode
Figure 45-15. XIN Clock Timing
Table 45-21. Crystal Characteristics
Symbol Parameter Conditions Min Typ Max Unit
ESR Equivalent Series Resistor (R
S
)
Fundamental @ 3 MHz
Fundamental @ 8 MHz
Fundamental @ 12 MHz
Fundamental @ 16 MHz
Fundamental @ 20 MHz
200
100
80
80
50
Ω
C
m
Motional capacitance 8fF
C
SHUNT
Shunt capacitance 7pF
Table 45-22. XIN Clock Electrical Characteristics (In Bypass Mode)
Symbol Parameter Conditions Min Typ Max Unit
1/(t
CPXIN
) XIN Clock Frequency
3–20 MHz crystal oscillator
in Bypass mode
50 MHz
t
CPXIN
XIN Clock Period 20 ns
t
CHXIN
XIN Clock High Half-period 8 ns
t
CLXIN
XIN Clock Low Half-period 8 ns
t
CLCH
Rise Time 400 ns
t
CHCL
Fall Time 400 ns
C
i
XIN Input Capacitance 6pF
R
IN
XIN Pull-down Resistor 1 MΩ
V
XIN_IL
V
XIN
Input Low-level Voltage -0.3 0.3 × V
DDPLL
V
V
XIN_IH
V
XIN
Input High-level Voltage 0.7 × V
DDPLL
V
DDPLL
+ 0.3 V
t
CPXIN
t
CLXIN
t
CHXIN
t
CLCH
t
CHCL
V
XIN_IL
V
XIN_IH