Datasheet

DRAFT
SAM3X / SAM3A [DATASHEET]
Atmel-11057C-ATARM-SAM3X-SAM3A-Datasheet_23-Mar-15
1380
Notes: 1. Refer to Section 45.7 “12-bit ADC Characteristics” and Section 45.9 “12-bit DAC Characteristics”
2. PA0, PA7, PA9, PA[14–15], PA[18–19], PA[25–31], PB[0–3], PB8, PB[10–11], PB14, PB[22–24], PC[0–30], PD[0–30], PE[0–
9], PE15, PE[17–21], PE23, PE25, PF[0–2]
3. PA[1–6], PA8, PA[10–13], PA[16–17], PA[20–24], PB[4–7], PB9, PB[12–13], PB[15–21], PB[25–31], PE[10–14], PE16,
PE22, PE24, PE26, PF[3–5]
4. FWUP, JTAGSEL, NRSTB, ERASE, TST
I
OL
Sink Current
1.62V < VDDIO < 1.95V; V
OL
= 0.4V
- Group 1
(2)
- Group 2
(3)
8
4
mA
3.0V < VDDIO < 3.6V; V
OL
= 0.4V
- Group 1
(2)
- Group 2
(3)
9
6
1.62V < VDDIO < 3.6V; V
OL
= 0.4V
- NRST, TDO 2
Relaxed Mode:
3.0V < VDDIO < 3.6V; V
OL
= 0.6V
- Group 1
(2)
- Group 2
(3)
14
9
I
IL_lkg
Input Low Leakage
Current
V
DDIO
powered pins
(3)
No pull-up or pull-down; V
IN
= GND; V
DDIO
Max.
(Typ: T
A
= 25°C, Max: T
A
= 85°C)
530nA
V
DDBU
powered pins
(4)
No pull-up or pull-down; V
IN
= GND; V
DDBU
Max.
(Typ: T
A
= 25°C, Max: T
A
= 85°C)
1µA
I
IH_lkg
Input High Leakage
Current
V
DDIO
powered pins
(3)
No pull-up or pull-down; V
IN
= VDD; V
DDIO
Max.
(Typ: T
A
= 25°C, Max: T
A
= 85°C)
218nA
V
DDBU
powered pins
(4)
No pull-up or pull-down; V
IN
= VDD; V
DDBU
Max.
(Typ: T
A
= 25°C, Max: T
A
= 85°C)
1µA
R
PULLUP
Pull-up Resistor
PA0–PA31, PB0–PB31, PC0–PC30, PD0–PD30,
PE0–PE31, PF0–PF5
50 100 150 kΩ
NRSTB 10 20 kΩ
R
PULLDOWN
Pull-down Resistor TST, ERASE, JTAGSEL 10 20 kΩ
R
ODT
On-die Series Termination
Resistor
PA0–PA31, PB0–PB31, PC0–PC30, PD0–PD30,
PE0–PE31, PF0–PF5
36 Ω
Table 45-2. DC Characteristics (Continued)
Symbol Parameter Conditions Min Typ Max Unit