Datasheet

Table 29-14. Minimum Wait Delay Before Writing the Next Flash or EEPROM Location
Symbol Minimum Wait Delay
t
WD_FUSE
4.5ms
t
WD_FLASH
4.5ms
t
WD_EEPROM
9.0ms
t
WD_ERASE
9.0ms
Figure 29-10. Serial Programming Waveforms
MSB
MSB
LSB
LSB
SERIAL CLOCK INPUT
(SCK)
SERIAL DATA INPUT
(MOSI)
(MISO)
SAMPLE
SERIAL DATA OUTPUT
Table 29-15. Serial Programming Instruction Set
Instruction Format
Instruction Byte 1 Byte 2 Byte 3 Byte 4 Operation
Programming
Enable
1010 1100 0101 0011 xxxx xxxx xxxx xxxx
Enable Serial Programming after
RESET goes low.
Chip Erase
1010 1100 100x xxxx xxxx xxxx xxxx xxxx
Chip Erase EEPROM and Flash.
Read Program
Memory
0010 H000 0000 aaaa bbbb bbbb oooo oooo
Read H (high or low) data o from
Program memory at word address
a:b.
Load Program
Memory Page
0100 H000 0000 xxxx xxxb bbbb iiii iiii
Write H (high or low) data i to
Program memory page at word
address b. Data Low byte must be
loaded before Data High byte is
applied within the same address.
Write Program
Memory Page
0100 1100 0000 aaaa bbbx xxxx xxxx xxxx
Write Program memory Page at
address a:b.
Read EEPROM
Memory
1010 0000 00xx xxxa bbbb bbbb oooo oooo
Read data o from EEPROM
memory at address a:b.
Write EEPROM
Memory
1100 0000 00xx xxxa bbbb bbbb iiii iiii
Write data i to EEPROM memory at
address a:b.
Read Lock Bits
0101 1000 0000 0000 xxxx xxxx xxoo oooo
Read Lock Bits. “0” = programmed,
“1” = unprogrammed. See Table
Lock Bit Byte for details.
Write Lock Bits
1010 1100 111x xxxx xxxx xxxx 11ii iiii
Write Lock Bits. Set bits = “0” to
program Lock Bits. See Table Lock
Bit Byte for details.
Read Signature
Byte
0011 0000 00xx xxxx xxxx xxbb oooo oooo
Read Signature Byte o at address
b.
AVR 8-Bit Microcontroller
MEMPROG- Memory Programming
© 2017 Microchip Technology Inc.
Datasheet Complete
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