Datasheet

Figure 29-3. Programming the Flash Waveform
RDY/BSY
WR
OE
RESET+12V
PAGEL
BS2
0x10 ADDR. LOW
ADDR. HIGH
DATA
DATA LOW DATA HIGH
ADDR. LOW DATA LOW DATA HIGH
XA1
XA0
BS1
XTAL1
XX XX
XX
A B C D E B C D E G H
F
Note:  “XX” is don’t care. The letters refer to the programming description above.
29.7.5 Programming the EEPROM
The EEPROM is organized in pages. When programming the EEPROM, the program data is latched into
a page buffer. This allows one page of data to be programmed simultaneously. The programming
algorithm for the EEPROM data memory is as follows (For details on Command, Address and Data
loading, refer to Programming the Flash):
1. Step A: Load Command “0001 0001”.
2. Step G: Load Address High Byte (0x00 - 0xFF).
3. Step B: Load Address Low Byte (0x00 - 0xFF).
4. Step C: Load Data (0x00 - 0xFF).
5. Step E: Latch data (give PAGEL a positive pulse).
6. Step K:Repeat 3 through 5 until the entire buffer is filled.
7. Step L: Program EEPROM page
7.1. Set BS1 to “0”.
7.2. Give WR a negative pulse. This starts programming of the EEPROM page. RDY/BSY goes
low.
7.3. Wait until to RDY/BSY goes high before programming the next page. Refer to the figure
below for signal waveforms.
AVR 8-Bit Microcontroller
MEMPROG- Memory Programming
© 2017 Microchip Technology Inc.
Datasheet Complete
40001974A-page 297