Datasheet

Table Of Contents
333
ATmega640/V-1280/V-1281/V-2560/V-2561/V [DATASHEET]
2549Q–AVR–02/2014
Figure 30-2. Addressing the Flash Which is Organized in Pages
(1)
Note: 1. PCPAGE and PCWORD are listed in Table 30-7 on page 328.
Figure 30-3. Programming the Flash Waveforms
(1)
Note: 1. “XX” is don’t care. The letters refer to the programming description above.
30.7.5 Programming the EEPROM
The EEPROM is organized in pages, see Table 30-8 on page 328. When programming the EEPROM, the program
data is latched into a page buffer. This allows one page of data to be programmed simultaneously. The program-
ming algorithm for the EEPROM data memory is as follows (refer to “Programming the Flash” on page 331 for
details on Command, Address and Data loading):
1. A: Load Command “0001 0001”.
2. G: Load Address High Byte (0x00 - 0xFF).
3. B: Load Address Low Byte (0x00 - 0xFF).
4. C: Load Data (0x00 - 0xFF).
5. E: Latch data (give PAGEL a positive pulse).
K: Repeat 3 through 5 until the entire buffer is filled.
L: Program EEPROM page.
PROGRAM MEMORY
WORD ADDRESS
WITHIN A PAGE
PAGE ADDRESS
WITHIN THE FLASH
INSTRUCTION WORD
PAGE
PCWORD[PAGEMSB:0]:
00
01
02
PAGEEND
PAGE
PCWORDPCPAGE
PCMSB
PAGEMSB
PROGRAM
COUNTER
RDY/BSY
WR
OE
RESET +12V
PAGEL
BS2
0x10 ADDR. LOW
ADDR. HIGH
DATA
DATA L OW D ATA H I G H
ADDR. LOW DATA LOW DATA HIGH
XA1
XA0
BS1
XTAL1
XX XX
XX
ABCDEB CDEG
F
ADDR. EXT.H
H
I