Datasheet

Note: The timing requirements shown in the figures above (that is, tDVXH, tXHXL, and tXLDX) also
apply to reading operation.
Table 29-9. Parallel programming characteristics, V
CC
= 5V ±10%.
Symbol Parameter Min. Typ. Max. Units
VPP Programming Enable Voltage 11.5 12.5 V
IPP Programming Enable Current 250 μA
tDVXH Data and Control Valid before XTAL1 High 67 ns
tXLXH XTAL1 Low to XTAL1 High 200
tXHXL XTAL1 Pulse Width High 150
tXLDX Data and Control Hold after XTAL1 Low 67
tXLWL XTAL1 Low to WR Low 0
tXLPH XTAL1 Low to PAGEL high 0
tPLXH PAGEL low to XTAL1 high 150
tBVPH BS1 Valid before PAGEL High 67
tPHPL PAGEL Pulse Width High 150
tPLBX BS1 Hold after PAGEL Low 67
tWLBX BS2/1 Hold after WR Low 67
tPLWL PAGEL Low to WR Low 67
tBVWL BS1 Valid to WR Low 67
tWLWH WR Pulse Width Low 150
tWLRL WR Low to RDY/BSY Low 0 1 μs
tWLRH WR Low to RDY/BSY High (1) 3.7 5 ms
tWLRH_CE WR Low to RDY/BSY High for Chip Erase (2) 7.5 10
tXLOL XTAL1 Low to OE Low 0 ns
tBVDV BS1 Valid to DATA valid 0 250
tOLDV OE Low to DATA Valid 250
tOHDZ OE High to DATA Tri-stated 250
1. Note: tWLRH is valid for the Write Flash, Write EEPROM, Write Fuse bits and Write Lock bits
commands.
2. Note: tWLRH_CE is valid for the Chip Erase command.
Atmel ATmega16M1/32M1/64M1 [DATASHEET]
Atmel-8209F-ATmega16M1/32M1/64M1_Datasheet_Complete-10/2016
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