Datasheet

Instruction/Operation Instruction Format
Byte 1 Byte 2 Byte 3 Byte 4
Read Extended Fuse Bits 0x50 0x08 0x00 data byte out
Read Calibration Byte 0x38 0x00 0x00 data byte out
Write Instructions
(6)
Write Program Memory Page 0x4C adr MSB
(8)
adr LSB
(8)
0x00
Write EEPROM Memory 0xC0 0000 00aa aaaa aaaa data byte in
Write EEPROM Memory Page (page access) 0xC2 0000 00aa aaaa aa00 0x00
Write Lock bits 0xAC 0xE0 0x00 data byte in
Write Fuse bits 0xAC 0xA0 0x00 data byte in
Write Fuse High bits 0xAC 0xA8 0x00 data byte in
Write Extended Fuse Bits 0xAC 0xA4 0x00 data byte in
Note:
1. Not all instructions are applicable for all parts.
2. a = address.
3. Bits are programmed ‘0’, unprogrammed ‘1’.
4. To ensure future compatibility, unused Fuses and Lock bits should be unprogrammed (‘1’) .
5. Refer to the corresponding section for Fuse and Lock bits, Calibration and Signature bytes and
Page size.
6. Instructions accessing program memory use a word address. This address may be random within
the page range.
7. See http://www.atmel.com/avr for Application Notes regarding programming and programmers.
8. WORDS.
If the LSB in RDY/BSY data byte out is ‘1’, a programming operation is still pending. Wait until this bit
returns ‘0’ before the next instruction is carried out.
Within the same page, the low data byte must be loaded prior to the high data byte.
After data is loaded to the page buffer, program the EEPROM page, Please refer to the following figure.
Atmel ATmega16M1/32M1/64M1 [DATASHEET]
Atmel-8209F-ATmega16M1/32M1/64M1_Datasheet_Complete-10/2016
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