Datasheet

Figure 28-2. Addressing the Flash Which Is Organized in Pages
PROGRAM MEMORY
WORD ADDRESS
WITHIN A PAGE
PAGE ADDRESS
WITHIN THE FLASH
INSTRUCTION WORD
PAGE
PCWORD[PAGEMSB:0]:
00
01
02
PAGEEND
PAGE
PCWORDPCPAGE
PCMSB
PAGEMSB
PROGRAM
COUNTER
Note: PCPAGE and PCWORD are listed in the table of No. of Words in a Page and No. of Pages in the
Flash in Page Size section.
Programming the Flash Waveforms
RDY/BSY
WR
OE
RESET +12V
PAGEL
BS2
0x10 ADDR. LOW
ADDR. HIGH
DATA
DATA LOW DATA HIGH
ADDR. LOW DATA LOW DATA HIGH
XA1
XA0
BS1
XTAL1
XX XX
XX
A B C D E B C D E G H
F
Note: “XX” is don’t care. The letters refer to the programming description above.
28.8.5. Programming the EEPROM
The EEPROM is organized in pages, please refer to table, No. of Words in a Page and No. of Pages in
the EEPROM, in the Page Size section. When programming the EEPROM, the program data is latched
into a page buffer. This allows one page of data to be programmed simultaneously. The programming
algorithm for the EEPROM data memory is as follows (For details on Command, Address and Data
loading, please refer to Programming the Flash):
Atmel ATmega16M1/32M1/64M1 [DATASHEET]
Atmel-8209F-ATmega16M1/32M1/64M1_Datasheet_Complete-10/2016
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