Datasheet

 2017 Microchip Technology Inc. DS60001516A-page 745
SAM9G20
40.5.5 Main Oscillator Characteristics
Note 1: C
SHUNT
is the shunt capacitance.
2: R
S
= 100 to 200 Ω; C
SHUNT
= 2.0 to 2.5 pF; C
m
= 2 to 1.5 pF (typ, worst case) using 1 kΩ serial resistor on XOUT.
3: R
S
= 50 to 100 Ω; C
SHUNT
= 2.0 to 2.5 pF; C
m
= 4 to 3 pF (typ, worst case).
4: R
S
= 25 to 50 Ω; C
SHUNT
= 2.5 to 3.0 pF; C
m
= 7 to 5 pF (typ, worst case).
5: R
S
= 20 to 50 Ω; C
SHUNT
= 3.2 to 4.0 pF; C
m
= 10 to 8 pF (typ, worst case).
6: Additional user load capacitance should be subtracted from C
LEXT
.
7: C
LEXT
is determined by taking into account internal, parasitic and package load capacitance.
Table 40-14: Main Oscillator Characteristics
Symbol Parameter Conditions Min Typ Max Unit
1/
(t
CPMAIN
)
Crystal Oscillator Frequency 3 16 20 MHz
C
CRYSTAL
Crystal Load Capacitance 12.5 – 17.5 pF
C
LEXT
(7)
External Load Capacitance
C
CRYSTAL
= 12.5 pF
(6)
–16–pF
C
CRYSTAL
= 17.5 pF
(6)
–26–pF
Duty Cycle 40 50 60 %
t
START
Startup Time
V
DDOSC
= 3 to 3.6V
C
S
= 3 pF
(1)
1/(t
CPMAIN
) = 3 MHz
C
S
= 7 pF
(1)
1/(t
CPMAIN
) = 8 MHz
C
S
= 7 pF
(1)
1/(t
CPMAIN
) = 16 MHz
C
S
= 7 pF
(1)
1/(t
CPMAIN
) = 20 MHz
––
14.5
4
1.4
1
ms
I
DDST
Standby Current Consumption Standby mode – – 1 µA
P
ON
Drive Level
@ 3 MHz
––
15
µW
@ 8 MHz 30
@ 16 MHz 50
@ 20 MHz 50
I
DD ON
Current Dissipation
@ 3 MHz
(2)
–
280 380
µA
@ 8 MHz
(3)
380 510
@ 16 MHz
(4)
500 630
@ 20 MHz
(5)
580 750