Datasheet
Table Of Contents
- 1. Description
- 2. About Code Examples
- 3. AVR CPU Core
- 4. Memories
- 5. System Clock
- 6. Power Management and Sleep Modes
- 7. System Control and Reset
- 8. Interrupts
- 9. I/O-Ports
- 10. External Interrupts
- 11. Timer/Counter3/1/0 Prescalers
- 12. 8-bit Timer/Counter0 with PWM
- 13. 16-bit Timer/Counter (Timer/Counter1 and Timer/Counter3)
- 14. 8-bit Timer/Counter2 with PWM and Asynchronous Operation
- 14.1 Features
- 14.2 Overview
- 14.3 Timer/Counter Clock Sources
- 14.4 Counter Unit
- 14.5 Output Compare Unit
- 14.6 Compare Match Output Unit
- 14.7 Modes of Operation
- 14.8 Timer/Counter Timing Diagrams
- 14.9 8-bit Timer/Counter Register Description
- 14.10 Asynchronous operation of the Timer/Counter2
- 14.11 Timer/Counter2 Prescaler
- 15. Output Compare Modulator - OCM
- 16. Serial Peripheral Interface - SPI
- 17. USART (USART0 and USART1)
- 17.1 Features
- 17.2 Overview
- 17.3 Dual USART
- 17.4 Clock Generation
- 17.5 Serial Frame
- 17.6 USART Initialization
- 17.7 Data Transmission - USART Transmitter
- 17.8 Data Reception - USART Receiver
- 17.9 Asynchronous Data Reception
- 17.10 Multi-processor Communication Mode
- 17.11 USART Register Description
- 17.12 Examples of Baud Rate Setting
- 18. Two-wire Serial Interface
- 19. Controller Area Network - CAN
- 20. Analog Comparator
- 21. Analog to Digital Converter - ADC
- 22. JTAG Interface and On-chip Debug System
- 23. Boundary-scan IEEE 1149.1 (JTAG)
- 24. Boot Loader Support - Read-While-Write Self-Programming
- 25. Memory Programming
- 26. Electrical Characteristics (1)
- 26.1 Absolute Maximum Ratings*
- 26.2 DC Characteristics
- 26.3 External Clock Drive Characteristics
- 26.4 Maximum Speed vs. VCC
- 26.5 Two-wire Serial Interface Characteristics
- 26.6 SPI Timing Characteristics
- 26.7 CAN Physical Layer Characteristics
- 26.8 ADC Characteristics
- 26.9 External Data Memory Characteristics
- 26.10 Parallel Programming Characteristics
- 27. Decoupling Capacitors
- 28. AT90CAN32/64/128 Typical Characteristics
- 28.1 Active Supply Current
- 28.2 Idle Supply Current
- 28.3 Power-down Supply Current
- 28.4 Power-save Supply Current
- 28.5 Standby Supply Current
- 28.6 Pin Pull-up
- 28.7 Pin Driver Strength
- 28.8 Pin Thresholds and Hysteresis
- 28.9 BOD Thresholds and Analog Comparator Offset
- 28.10 Internal Oscillator Speed
- 28.11 Current Consumption of Peripheral Units
- 28.12 Current Consumption in Reset and Reset Pulse Width
- 29. Register Summary
- 30. Instruction Set Summary
- 31. Ordering Information
- 32. Packaging Information
- 33. Errata
- 34. Datasheet Revision History for AT90CAN32/64/128
- 34.1 Changes from 7679G - 03/08 to 7679H - 08/08
- 34.2 Changes from 7679F - 11/07 to 7679G - 03/08
- 34.3 Changes from 7679E - 07/07 to 7679F - 11/07
- 34.4 Changes from 7679D - 02/07 to 7679E - 07/07
- 34.5 Changes from 7679C - 01/07 to 7679D - 02/07
- 34.6 Changes from 7679B - 11/06 to 7679C - 01/07
- 34.7 Changes from 7679A - 10/06 to 7679B - 11/06
- 34.8 Document Creation

342
7679H–CAN–08/08
AT90CAN32/64/128
25.6 Parallel Programming
25.6.1 Enter Programming Mode
The following algorithm puts the device in parallel programming mode:
1. Apply power between V
CC
and GND.
2. Set RESET
to “0” and toggle XTAL1 at least six times.
3. Set the Prog_enable pins listed in Table 25-8 on page 340 to “0000” and wait at least
100 ns.
4. Apply 11.5 - 12.5V to RESET
. Any activity on Prog_enable pins within 100 ns after
+12V has been applied to RESET
, will cause the device to fail entering programming
mode.
5. Wait at least 50 µs before sending a new command.
25.6.2 Considerations for Efficient Programming
The loaded command and address are retained in the device during programming. For efficient
programming, the following should be considered.
• The command needs only be loaded once when writing or reading multiple memory
locations.
• Skip writing the data value 0xFF, that is the contents of the entire EEPROM (unless the
EESAVE Fuse is programmed) and Flash after a Chip Erase.
• Address high byte needs only be loaded before programming or reading a new 256 word
window in Flash or 256 byte EEPROM. This consideration also applies to Signature bytes
reading.
25.6.3 Chip Erase
The Chip Erase will erase the Flash and EEPROM
(1)
memories plus Lock bits. The Lock bits are
not reset until the program memory has been completely erased. The Fuse bits are not
changed. A Chip Erase must be performed before the Flash and/or EEPROM are
reprogrammed.
Load Command “Chip Erase”
1. Set XA1, XA0 to “10”. This enables command loading.
2. Set BS1 to “0”.
3. Set DATA to “1000 0000”. This is the command for Chip Erase.
4. Give XTAL1 a positive pulse. This loads the command.
5. Give WR
a negative pulse. This starts the Chip Erase. RDY/BSY goes low.
6. Wait until RDY/BSY
goes high before loading a new command.
Note: 1. The EEPROM memory is preserved during Chip Erase if the EESAVE Fuse is programmed.
25.6.4 Programming the Flash
The Flash is organized in pages, see Table 25-11 on page 341. When programming the Flash,
the program data is latched into a page buffer. This allows one page of program data to be pro-
grammed simultaneously. The following procedure describes how to program the entire Flash
memory:
A: Load Command “Write Flash”