Datasheet

258
32117D–AVR-01/12
AT32UC3C
Figure 15-2. High Speed Mode
15.4.7 Quick Page Read
A dedicated command, Quick Page Read (QPR), is provided to read all words in an addressed
page. All bits in all words in this page are AND’ed together, returning a 1-bit result. This result is
placed in the Quick Page Read Result (QPRR) bit in Flash Status Register (FSR). The QPR
command is useful to check that a page is in an erased state. The QPR instruction is much
faster than performing the erased-page check using a regular software subroutine.
15.4.8 Page Buffer Operations
The flash memory has a write and erase granularity of one page; data are written and erased in
chunks of one page. When programming a page, the user must first write the new data into the
Page Buffer. The contents of the entire Page Buffer is copied into the desired page in flash
memory when the user issues the Write Page command, See Section “15.5.1” on page 260.
In order to program data into flash page Y, write the desired data to locations Y0 to 63 in the reg-
ular flash memory map. Writing to an address A in the flash memory map will not update the
flash memory, but will instead update location A%64 in the page buffer. The PAGEN field in the
Flash Command (FCMD) register will at the same time be updated with the value A/64.
Frequency
Frequency limit
for 0 wait state
operation
No
r
m
al
High
Speed mode
1 wait state
0 wait state