Datasheet
5
0006M–PEEPR–12/09
AT28C256
Notes: 1. X can be V
IL
or V
IH
.
2. Refer to AC programming waveforms.
3. V
H
= 12.0V ± 0.5V.
5. DC and AC Operating Range
AT28C256-15 AT28C256-20 AT28C256-25 AT28C256-35
Operating Temperature
(Case)
Ind. -40°C - 85°C
Mil. -55°C - 125°C -55°C - 125°C -55°C - 125°C -55°C - 125°C
V
CC
Power Supply 5V ± 10% 5V ± 10% 5V ± 10% 5V ± 10%
6. Operating Modes
Mode CE OE WE I/O
Read V
IL
V
IL
V
IH
D
OUT
Write
(2)
V
IL
V
IH
V
IL
D
IN
Standby/Write Inhibit V
IH
X
(1)
X High Z
Write Inhibit X X V
IH
Write Inhibit X V
IL
X
Output Disable X V
IH
X High Z
Chip Erase V
IL
V
H
(3)
V
IL
High Z
7. Absolute Maximum Ratings*
Temperature under Bias ................................ -55°C to +125°C
*NOTICE: Stresses beyond those listed under “Absolute
Maximum Ratings” may cause permanent dam-
age to the device. This is a stress rating only and
functional operation of the device at these or any
other conditions beyond those indicated in the
operational sections of this specification is not
implied. Exposure to absolute maximum rating
conditions for extended periods may affect
device reliability
Storage Temperature..................................... -65°C to +150°C
All Input Voltages
(including NC Pins)
with Respect to Ground ...................................-0.6V to +6.25V
All Output Voltages
with Respect to Ground .............................-0.6V to V
CC
+ 0.6V
Voltage on
OE and A9
with Respect to Ground ...................................-0.6V to +13.5V
8. DC Characteristics
Symbol Parameter Condition Min Max Units
I
LI
Input Load Current V
IN
=0VtoV
CC
+1V 10 µA
I
LO
Output Leakage Current V
I/O
=0VtoV
CC
10 µA
I
SB1
V
CC
Standby Current CMOS CE = V
CC
- 0.3V to V
CC
+1V
Ind. 200 µA
Mil. 300 µA
I
SB2
V
CC
Standby Current TTL CE = 2.0V to V
CC
+1V 3 mA
I
CC
V
CC
Active Current f = 5 MHz; I
OUT
=0mA 50 mA
V
IL
Input Low Voltage 0.8 V
V
IH
Input High Voltage 2.0 V
V
OL
Output Low Voltage I
OL
= 2.1 mA 0.45 V
V
OH
Output High Voltage I
OH
= -400 µA 2.4 V