Datasheet
2010 Microchip Technology Inc. DS21935D-page 3
TCN75A
1.0 ELECTRICAL
CHARACTERISTICS
Absolute Maximum Ratings †
V
DD
....................................................................... 6.0V
Voltage at all Input/Output pins .....GND – 0.3V to 5.5V
Storage temperature .......................... -65°C to +150°C
Ambient temp. with power applied ..... -55°C to +125°C
Junction Temperature (T
J
) ................................. 150°C
ESD protection on all pins (HBM:MM) .......(4 kV:400V)
Latch-up current at each pin ......................... ±200 mA
†Notice: Stresses above those listed under “Maximum
ratings” may cause permanent damage to the device. This is
a stress rating only and functional operation of the device at
those or any other conditions above those indicated in the
operational listings of this specification is not implied.
Exposure to maximum rating conditions for extended periods
may affect device reliability.
DC CHARACTERISTICS
Electrical Specifications: Unless otherwise indicated, V
DD
= 2.7V to 5.5V, GND = Ground, and
T
A
= -40°C to +125°C.
Parameters Sym Min Typ Max Unit Conditions
Power Supply
Operating Voltage Range V
DD
2.7 — 5.5 V
Operating Current I
DD
— 200 500 µA Continuous operation
Shutdown Current I
SHDN
— 0.1 2 µA Shutdown mode
Power-on Reset (POR) Threshold V
POR
—1.7— VV
DD
falling edge
Line Regulation °C/V
DD
—0.2—°C/VV
DD
= 2.7V to 5.5V
Temperature Sensor Accuracy
T
A
= -40°C to +125°C T
ACY
-2 ±1 +2 °C V
DD
= 3.3V
Internal ADC
Conversion Time:
0.5°C Resolution t
CONV
— 30 — ms 33 samples/sec (typical)
0.25°C Resolution t
CONV
— 60 — ms 17 samples/sec (typical)
0.125°C Resolution t
CONV
— 120 — ms 8 samples/sec (typical)
0.0625°C Resolution t
CONV
— 240 — ms 4 samples/sec (typical)
Alert Output (Open-drain)
High-level Current I
OH
—— 1µAV
OH
= 5V
Low-level Voltage V
OL
——0.4VI
OL
= 3 mA
Thermal Response
Response Time t
RES
— 1.4 — s Time to 63% (89°C)
27°C (air) to 125°C (oil
bath)