Datasheet
2001-2012 Microchip Technology Inc. DS21490D-page 3
TCN75
1.0 ELECTRICAL
CHARACTERISTICS
Absolute Maximum Ratings*
Supply Voltage (V
DD
) ............................................6.0V
ESD Susceptibility (Note 3) ...............................1000V
Voltage on Pins:
A0, A1, A2.......... (GND – 0.3V) to (V
DD
+ 0.3V)
Voltage on Pins:
SDA, SCL, INT/CMPTR .. (GND – 0.3V) to 5.5V
Thermal Resistance (Junction to Ambient)
8-Pin SOIC..........................................170°C/W
8-Pin MSOP.......................................250°C//W
Operating Temperature Range (T
J
): -55°C to +125°C
Storage Temperature Range (T
STG
): -65°C to +150°C
*Stresses above those listed under “Absolute
Maximum Ratings” may cause permanent damage to
the device. These are stress ratings only and functional
operation of the device at these or any other conditions
above those indicated in the operation sections of the
specifications is not implied. Exposure to Absolute
Maximum Rating conditions for extended periods may
affect device reliability.
TCN75 ELECTRICAL SPECIFICATIONS
Electrical Characteristics: V
DD
= 2.7V – 5.5V, -55°C (T
A
= T
J
) 125°C, unless otherwise noted.
Symbol Parameter Min Typ Max Units Test Conditions
Power Supply
V
DD
Power Supply Voltage 2.7 — 5.5 —
I
DD
Operating Current —
—
0.250
—
—
1.0
mA Serial Port Inactive (T
A
= T
J
= 25°C)
Serial Port Active
I
DD1
Standby Supply Current — 1 — A Shutdown Mode, Serial Port
Inactive (T
A
= T
J
= 25°C)
INT/CMPTR Output
I
OL
Sink Current: INT/CMPTR,
SDA Outputs
—14mANote 1
t
TRIP
INT/CMPTR Response Time 1 — 6 t
CONV
User Programmable
V
OL
Output Low Voltage — — 0.8 V I
OL
= 4.0 mA
Temp-to-Bits Converter
T Temperature Accuracy (Note 2) —±3—C -55°C T
A
+125°C
V
DD
= 3.3V: TCN75-3.3 MOA,
TCN75-3.3 MUA
V
DD
= 5.0V: TCN75-5.0 MOA,
TCN75-5.0 MUA
—±0.5±3 C25°C T
A
100°C
t
CONV
Conversion Time — 55 — msec
T
SET(PU)
TEMP Default Value — 80 — C Power-up
T
HYST(PU)
T
HYST
Default Value — 75 — C Power-up
2-Wire Serial Bus Interface
V
IH
Logic Input High V
DD
x 0.7 — — V
V
IL
Logic Input Low — — V
DD
x 0.3 V
V
OL
Logic Output Low — — 0.4 V I
OL
= 3 mA
C
IN
Input Capacitance SDA, SCL — 15 — pF
I
LEAK
I/O Leakage — ±100 — pA (T
A
= T
J
= 25°C)
I
OL(SDA)
SDA Output Low Current ——6mA