Datasheet

© 2007 Microchip Technology Inc. DS21483D-page 3
TC9400/9401/9402
1.0 ELECTRICAL
CHARACTERISTICS
Absolute Maximum Ratings †
V
DD
– V
SS
......................................................................+18V
I
IN
..................................................................................10 mA
V
OUTMAX
– V
OUT
Common.................................................23V
V
REF
– V
SS
.....................................................................-1.5V
Storage Temperature Range.........................-65°C to +150°C
Operating Temperature Range:
C Device ...................................................... 0°C to +70°C
E Device....................................................-40°C to +85°C
Package Dissipation (T
A
≤ 70°C):
8-Pin CerDIP........................................................800 mW
8-Pin Plastic DIP ..................................................730 mW
8-Pin SOIC...........................................................470 mW
† Stresses above those listed under “Absolute Maximum
Ratings” may cause permanent damage to the device. These
are stress ratings only and functional operation of the device
at these or any other conditions above those indicated in the
operation sections of the specifications is not implied.
Exposure to Absolute Maximum Rating conditions for
extended periods may affect device reliability.
TC940X ELECTRICAL SPECIFICATIONS
Electrical Characteristics: unless otherwise specified, V
DD
= +5V, V
SS
= -5V, V
GND
= 0V, V
REF
= -5V, R
BIAS
= 100 kΩ, Full Scale =
10 kHz. T
A
= +25°C, unless temperature range is specified (-40°C to +85°C for E device, 0°C to +70°C for C device).
Parameter Min Typ Max Min Typ Max Min Typ Max Units Test Conditions
Voltage-to-Frequency
Accuracy TC9400 TC9401 TC9402
Linearity 10 kHz — 0.01 0.05 — 0.004 0.01 — 0.05 0.25 %
Full Scale
Output Deviation from
Straight Line Between
Normalized Zero and
Full Scale Input
Linearity 100 kHz — 0.1 0.25 — 0.04 0.08 — 0.25 0.5 %
Full Scale
Output Deviation from
Straight Line Between
Normalized Zero Read-
ing and Full Scale Input
Gain Temperature
Drift (Note 1)
— ±25 ±40 — ±25 ±40 — ±50 ± 100 ppm/°C
Full Scale
Variation in Gain A due
to Temperature Change
Gain Variance — ±10 — — ±10 — — ±10 — % of
Nominal
Variation from Ideal
Accuracy
Zero Offset
(Note 2)
— ±10 ±50 — ±10 ±50 — ±20 ±100 mV Correction at Zero
Adjust for Zero Output
when Input is Zero
Zero Temperature
Drift (Note 1)
— ±25 ±50 — ±25 ±50 — ±50 ±100 µV/°C Variation in Zero Offset
Due to Temperature
Change
Note 1: Full temperature range; not tested.
2: I
IN
= 0.
3: Full temperature range, I
OUT
= 10 mA.
4: I
OUT
= 10 µA.
5: Threshold Detect = 5V, Amp Out = 0V, full temperature range.
6: 10 Hz to 100 kHz; not tested.
7: 5 µs minimum positive pulse width and 0.5 µs minimum negative pulse width.
8: t
R
= t
F
= 20 ns.
9: R
L
≥ 2kΩ, tested @ 10 kΩ.
10: Full temperature range, V
IN
= -0.1V.