Datasheet

TC682
DS21453D-page 2  2002-2012 Microchip Technology Inc.
1.0 ELECTRICAL
CHARACTERISTICS
Absolute Maximum Ratings*
V
IN
.......................................................................+5.8V
V
IN
dV/dT ........................................................1V/sec
V
OUT
...................................................................-11.6V
Short-Circuit Duration - V
OUT
.....................Continuous
Power Dissipation (T
A
70°C)
8-Pin PDIP ..............................................730 mW
8-Pin SOIC..............................................470 mW
Operating Temperature Range.............-40°C to +85°C
Storage Temperature (Unbiased).......-65°C to +150°C
*Stresses above those listed under “Absolute
Maximum Ratings” may cause permanent damage to
the device. These are stress ratings only and functional
operation of the device at these or any other conditions
above those indicated in the operation sections of the
specifications is not implied. Exposure to Absolute
Maximum Rating conditions for extended periods may
affect device reliability.
TC682 ELECTRICAL SPECIFICATIONS
Electrical Characteristics: Over operating temperature range, V
IN
= +5V, test circuit Figure 3-1 unless otherwise noted.
Symbol Parameter Min Typ Max Units Test Conditions
V
IN
Supply Voltage Range 2.4 — 5.5 V R
L
= 2 k
I
IN
Supply Current —
—
185
—
300
400
AR
L
= , T
A
= 25°C
R
L
= 
R
OUT
V
OUT
Source Resistance —
—
140
—
170
180
230
320
 I
L
–
= 10 mA, T
A
= 25°C
I
L
–
= 10 mA
I
L
–
= 5 mA, V
IN
= 2.8V
F
OSC
Oscillator Frequency — 12 — kHz
P
EFF
Power Efficiency 90 92 — % R
L
= 2 k, T
A
= 25°C
V
OUTEFF
Voltage Conversion Efficiency 99 99.9 — % V
OUT
, R
L
= 