Datasheet
2002-2013 Microchip Technology Inc. DS21737B-page 3
TC664/TC665
1.0 ELECTRICAL
CHARACTERISTICS
Absolute Maximum Ratings *
V
DD
..................................................................................6.5 V
Input Voltages .................................... -0.3 V to (V
DD
+ 0.3 V)
Output Voltages ..................................-0.3 V to (V
DD
+ 0.3 V)
Storage temperature .....................................-65°C to +150°C
Ambient temp. with power applied................-40°C to +125°C
Maximum Junction Temperature, T
J
............................. 150°C
ESD protection on all pins4kV
*Notice: Stresses above those listed under “Maximum rat-
ings” may cause permanent damage to the device. This is a
stress rating only and functional operation of the device at
those or any other conditions above those indicated in the
operational listings of this specification is not implied. Expo-
sure to maximum rating conditions for extended periods may
affect device reliability.
PIN FUNCTION TABLE
ELECTRICAL SPECIFICATIONS
Name Function
V
IN
Analog Input
C
F
Analog Output
SCLK Serial Clock Input
SDA Serial Data In/Out (Open Drain)
GND Ground
FAULT
Digital (Open Drain) Output
NC No Connection
SENSE Analog Input
V
OUT
Digital Output
V
DD
Power Supply Input
Electrical Characteristics: Unless otherwise noted, all limits are specified for V
DD
= 3.0 V to 5.5 V, -40°C <T
A
< +85°C.
Parameters Sym Min Typ Max Units Conditions
Supply Voltage V
DD
3.0 — 5.5 V
Operating Supply Current I
DD
— 150 300 µA Pins 8, 9 Open
Shutdown Mode Supply Current I
DDSHDN
— 5 10 µA Pins 8, 9 Open
V
OUT
PWM Output
V
OUT
Rise Time t
R
— — 50 µsec I
OH
= 5 mA, Note 1
V
OUT
Fall Time t
F
— — 50 µsec I
OL
= 1 mA, Note 1
Sink Current at V
OUT
Output I
OL
1.0 — — mA V
OL
= 10% of V
DD
Source Current at V
OUT
Output I
OH
5.0 — — mA V
OH
= 80% of V
DD
PWM Frequency F 26 30 34 Hz C
F
= 1 µF
V
IN
Input
V
IN
Input Voltage for 100% PWM duty-cycle V
C(MAX)
2.45 2.6 2.75 V
V
C(MAX)
- V
C(MIN)
V
CRANGE
1.25 1.4 1.55 V
V
IN
Input Resistance — 10M — V
DD
= 5.0 V
V
IN
Input Leakage Current I
IN
-1.0 — +1.0 µA
SENSE Input
SENSE Input Threshold Voltage with
Respect to GND
V
THSENSE
80 100 120 mV
FAULT
Output
FAULT
Output LOW Voltage V
OL
——0.3VI
OL
= 2.5 mA
FAULT
Output Response Time t
FAULT
—2.4 —sec
Fan RPM-to-Digital Output
Fan RPM ERROR -15 — +15 % RPM > 1600
2-Wire Serial Bus Interface
Logic Input High V
IH
2.1 — — V Note 2
Logic Input Low V
IL
——0.8V
Logic Output Low V
OL
——0.4VI
OL
= 3 mA
Input Capacitance SDA, SCLK C
IN
—10 15pFNote 1
I/O Leakage Current I
LEAK
-1.0 — +1.0 µA
SDA Output Low Current I
OLSDA
6——mAV
OL
= 0.6 V
Note 1: Not production tested, ensured by design, tested during characterization.
2: For 5.0 V < V
DD
5.5 V, the limit for V
IH
= 2.2 V.